Device design consideration for nanoscale MOSFET using semiconductor TCAD tools

Device design consideration for nanoscale MOSFET using semiconductor TCAD tools

The evolution of metal-oxide-semiconductor field effect transistor (MOSFET) technology has been governed mainly by device scaling over the past twenty years. One of the key questions concerning future ULSI technology is whether MOSFET devices can be scaled to 100 nmchannel length and beyond for cont...

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Bibliografische gegevens
Hoofdauteurs:	Teoh, Chin Hong, Ismail, Razali
Formaat:	Conference or Workshop Item
Taal:	English
Gepubliceerd in:	2006
Onderwerpen:	TK Electrical engineering. Electronics Nuclear engineering
Online toegang:	http://eprints.utm.my/7496/1/Razali_Ismail_2006_Device_Design_Consideration_for_Nanoscale.pdf

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