Device design consideration for nanoscale MOSFET using semiconductor TCAD tools

Device design consideration for nanoscale MOSFET using semiconductor TCAD tools

The evolution of metal-oxide-semiconductor field effect transistor (MOSFET) technology has been governed mainly by device scaling over the past twenty years. One of the key questions concerning future ULSI technology is whether MOSFET devices can be scaled to 100 nmchannel length and beyond for cont...

Bibliografske podrobnosti
Main Authors:	Teoh, Chin Hong, Ismail, Razali
Format:	Conference or Workshop Item
Jezik:	English
Izdano:	2006
Teme:	TK Electrical engineering. Electronics Nuclear engineering
Online dostop:	http://eprints.utm.my/7496/1/Razali_Ismail_2006_Device_Design_Consideration_for_Nanoscale.pdf

Podobne knjige/članki

Characterization of strained silicon MOSFET using semiconductor TCAD tools
od: Wong, Yah Jin, et al.
Izdano: (2006)

Optimization of nanoscale complementary metal oxide semiconductor performance
od: Teoh, Chin Hong
Izdano: (2007)

Modelling of nanoscale MOSFET performance in the velocity saturation region
od: Tan, Micheal Loong Peng, et al.
Izdano: (2007)

Optimization of device performance using semiconductor TCAD tools /
od: 244399 Yew, Kwang Sing, et al.
Izdano: (2007)

Modeling the effect of velocity saturation in nanoscale MOSFET
od: Tan, Michael Loong Peng
Izdano: (2006)

Development of partially and fully depleted silicon-on-insulator MOSFET using tcad tools /
od: Teoh, Shu Wen, 1986-, et al.
Izdano: (2010)

Characterization of silicon - on - insulator (SOI) mosfet using TCAD tools /
od: 247481 Yeoh, Chun Jern, et al.
Izdano: (2007)

Process and characterization of MOSFET incorporating dielectric pocket (DP-MOSFET) using TCAD tools /
od: Razali Ismail, 1960-, author, et al.
Izdano: (2007)

Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
od: Arora, Vijay K., et al.
Izdano: (2007)

Design and simulation of 50 nm vertical double-gate MOSFET (VDGM)
od: Saad, Ismail, et al.
Izdano: (2006)

Scaling and numerical simulation analysis of 50 nm MOSFET incorporating dielectric pocket (DP-MOSFET)
od: M. N., Zul Atfyi Fauzan, et al.
Izdano: (2008)

Design of transformerless inverter using H-Bridge Mosfet as a switching device
od: Muhammad Rafiq, Muhammad Amin
Izdano: (2013)

Optimization of device performance using semiconductor TCAD tools [electronic resource] /
od: Yew, Kwang Sing, author, et al.
Izdano: (2007)

TCAD-Informed Surrogate Models of Semiconductor Devices
od: Chinnery, Samuel B.
Izdano: (2022)

Semiconductor device fabrication using TCAD simulations /
od: 389068 Lim, Chee Loon
Izdano: (2004)

Emerging nanoelectronics device design exploration incorporating vertical impact-ionization mosfet and strained (SiGe) technology
od: Ismail Saad
Izdano: (2013)

Some Considerations And Design Optimization Of 3-Phase Semiconductor Rectifier Power Transformer
od: Rama Rao, K.S.
Izdano: (2003)

Characterization of 50 nm MOSFET with dielectric pocket
od: Fauzan, Zul Atfyi, et al.
Izdano: (2007)

TCAD simulation of tunnel FET devices
od: Ang, Ming Hao
Izdano: (2009)

Study the effect of drain induced barrier lowering (DIBL) in CMOS device by using silvaco TCAD / Hashimah Hashim , Shafinaz Sobihana Shariffudin , Puteri Sarah Mohamad &Aad
od: Hashimah, Hashim, et al.
Izdano: (2007)

Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method
od: Saad, Ismail, et al.
Izdano: (2008)

Characterization of silicon - on - insulator (SOI) mosfet using TCAD tools [electronic resource] /
od: 247481 Yeoh, Chun Jern, et al.
Izdano: (2007)

Performance design and simulation analysis of vertical double gate MOSFET (VDGM)
od: Ismail Saad, et al.
Izdano: (2011)

CAD software for semiconductor device modeling
od: Othman, Yasmin
Izdano: (2004)

Design and develop current limiter for mosfet during overvoltage operation
od: Nur Haezah, Mamat
Izdano: (2012)

Semiconductor device fabrication using TCAD simulations [compact disc] /
od: 389068 Lim, Chee Loon
Izdano: (2004)

Safe operating condition and lifetime estimation in p-MOSFET device due to negative bias temperature instability
od: Hussin, H., et al.
Izdano: (2011)

Effects of total Dose irradiation on Semiconductor devices
od: Haider F. Abdul Amir, et al.
Izdano: (2009)

Advanced fabrication techniques for designing nanoscale mosfet /
od: 266516 Wong, Suei Huey, et al.
Izdano: (2007)

Microcontroller based variable gate voltage for MOSFET
od: Nuripaizail, Ahmad
Izdano: (2008)

Penguatkuasa VHF Menggunakan Mosfet Kuasa
od: Abu Hasan, Juniah
Izdano: (2006)

Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET
od: Ismail Saad, et al.
Izdano: (2011)

Simulation of 0.18 micron MOSFET and its characterization
od: Ahmad Radzi, Syafeeza
Izdano: (2005)

Semi - empirical device model for nanoscale MOSFET /
od: 418115 Lai, Zyn Ming, et al.
Izdano: (2007)

27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION
od: T. T. Trung, et al.
Izdano: (2019-06-01)

Modelling Of Advanced Iii-V Compound Semiconductor Devices
od: Rozik, Nik Nor Amirah
Izdano: (2017)

EBB 424E-3 SEMICONDUCTOR DEVICES AND OPTOELECTRONIC OCT 04.
od: PPKBSM, Pusat Pengajian Kejuruteraan Bahan dan Sumber Mineral
Izdano: (2004)

Transport enhancement techniques for nanoscale MOSFETs
od: Khakifirooz, Ali
Izdano: (2008)

Characterization of planar and vertical n-channel mosfet in nanometer regime
od: Sulaiman, Ima
Izdano: (2007)

A study on the impact of processing parameters on low-voltage power MOSFET
od: Nur Aqilah, Othman
Izdano: (2012)