Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity...
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| Format: | Article |
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American Institute of Physics
2007
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| author | Arora, Vijay K. Tan, Michael L. P. Saad, Ismail Ismail, Razali |
| author_facet | Arora, Vijay K. Tan, Michael L. P. Saad, Ismail Ismail, Razali |
| author_sort | Arora, Vijay K. |
| collection | ePrints |
| description | The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity is shown to rise with the increasing drain voltage approaching the intrinsic Fermi velocity, giving the equivalent of channel-length modulation. Quantum confinement effect degrades the channel mobility to the confining gate electric field as well as increases the effective thickness of the gate oxide. When the theory developed is applied to an 80 nm MOSFET, excellent agreement to the experimental data is obtained. |
| first_indexed | 2024-03-05T18:11:15Z |
| format | Article |
| id | utm.eprints-7500 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:11:15Z |
| publishDate | 2007 |
| publisher | American Institute of Physics |
| record_format | dspace |
| spelling | utm.eprints-75002017-10-11T04:43:55Z http://eprints.utm.my/7500/ Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor Arora, Vijay K. Tan, Michael L. P. Saad, Ismail Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity is shown to rise with the increasing drain voltage approaching the intrinsic Fermi velocity, giving the equivalent of channel-length modulation. Quantum confinement effect degrades the channel mobility to the confining gate electric field as well as increases the effective thickness of the gate oxide. When the theory developed is applied to an 80 nm MOSFET, excellent agreement to the experimental data is obtained. American Institute of Physics 2007-09-06 Article PeerReviewed Arora, Vijay K. and Tan, Michael L. P. and Saad, Ismail and Ismail, Razali (2007) Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor. Applied Physics Letters, 91 (10). ISSN 1077-3118 http://dx.doi.org/10.1063/1.2780058 10.1063/1.2780058 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Arora, Vijay K. Tan, Michael L. P. Saad, Ismail Ismail, Razali Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor |
| title | Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor |
| title_full | Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor |
| title_fullStr | Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor |
| title_full_unstemmed | Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor |
| title_short | Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor |
| title_sort | ballistic quantum transport in a nanoscale metal oxide semiconductor field effect transistor |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
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