Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor
The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity...
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| Format: | Article |
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American Institute of Physics
2007
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