Scattering-limited and ballistic transport in a nano-CMOS circuit
The mobility and saturation velocity in the nanoscale metal oxide semiconductor field effect transistor (MOSFET) are revealed to be ballistic; the former in a channel whose length is smaller than the scattering-limited mean free path. The drain-end carrier velocity is smaller than the ultimate satur...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2008
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| Subjects: | |
| Online Access: | http://eprints.utm.my/7501/3/RazaliIsmail2008_ScatteringlimitedandBallisticTransport.pdf |
| _version_ | 1796854226937184256 |
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| author | Saad, Ismail Tan, Micheal Loong Peng Chi, Aaron Enn Lee Ismail, Razali Arora, Vijay Kumar |
| author_facet | Saad, Ismail Tan, Micheal Loong Peng Chi, Aaron Enn Lee Ismail, Razali Arora, Vijay Kumar |
| author_sort | Saad, Ismail |
| collection | ePrints |
| description | The mobility and saturation velocity in the nanoscale metal oxide semiconductor field effect transistor (MOSFET) are revealed to be ballistic; the former in a channel whose length is smaller than the scattering-limited mean free path. The drain-end carrier velocity is smaller than the ultimate saturation velocity due to the presence of a finite electric field at the drain. The current–voltage characteristics of a MOSFET are obtained and shown to agree well with the experimental observations on an 80 nm channel. When scaling complementary pair of NMOS and PMOS channels, it is shown that the length of the channel is proportional to the channel mobility. On the other hand, the width of the channel is scaled inversely proportional to the saturation velocity of the channel. The results reported may transform the way the ULSI circuits are designed and their performance evaluated. |
| first_indexed | 2024-03-05T18:11:15Z |
| format | Article |
| id | utm.eprints-7501 |
| institution | Universiti Teknologi Malaysia - ePrints |
| language | English |
| last_indexed | 2024-03-05T18:11:15Z |
| publishDate | 2008 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | utm.eprints-75012017-02-14T04:07:32Z http://eprints.utm.my/7501/ Scattering-limited and ballistic transport in a nano-CMOS circuit Saad, Ismail Tan, Micheal Loong Peng Chi, Aaron Enn Lee Ismail, Razali Arora, Vijay Kumar TK Electrical engineering. Electronics Nuclear engineering The mobility and saturation velocity in the nanoscale metal oxide semiconductor field effect transistor (MOSFET) are revealed to be ballistic; the former in a channel whose length is smaller than the scattering-limited mean free path. The drain-end carrier velocity is smaller than the ultimate saturation velocity due to the presence of a finite electric field at the drain. The current–voltage characteristics of a MOSFET are obtained and shown to agree well with the experimental observations on an 80 nm channel. When scaling complementary pair of NMOS and PMOS channels, it is shown that the length of the channel is proportional to the channel mobility. On the other hand, the width of the channel is scaled inversely proportional to the saturation velocity of the channel. The results reported may transform the way the ULSI circuits are designed and their performance evaluated. Elsevier 2008-07-25 Article PeerReviewed application/pdf en http://eprints.utm.my/7501/3/RazaliIsmail2008_ScatteringlimitedandBallisticTransport.pdf Saad, Ismail and Tan, Micheal Loong Peng and Chi, Aaron Enn Lee and Ismail, Razali and Arora, Vijay Kumar (2008) Scattering-limited and ballistic transport in a nano-CMOS circuit. Microelectronics Journal . ISSN 0026-2692 (In Press) http://dx.doi.org/10.1016/j.mejo.2008.06.049 10.1016/j.mejo.2008.06.049 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Saad, Ismail Tan, Micheal Loong Peng Chi, Aaron Enn Lee Ismail, Razali Arora, Vijay Kumar Scattering-limited and ballistic transport in a nano-CMOS circuit |
| title | Scattering-limited and ballistic transport in a nano-CMOS circuit |
| title_full | Scattering-limited and ballistic transport in a nano-CMOS circuit |
| title_fullStr | Scattering-limited and ballistic transport in a nano-CMOS circuit |
| title_full_unstemmed | Scattering-limited and ballistic transport in a nano-CMOS circuit |
| title_short | Scattering-limited and ballistic transport in a nano-CMOS circuit |
| title_sort | scattering limited and ballistic transport in a nano cmos circuit |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/7501/3/RazaliIsmail2008_ScatteringlimitedandBallisticTransport.pdf |
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