Scattering-limited and ballistic transport in a nano-CMOS circuit

Scattering-limited and ballistic transport in a nano-CMOS circuit

The mobility and saturation velocity in the nanoscale metal oxide semiconductor field effect transistor (MOSFET) are revealed to be ballistic; the former in a channel whose length is smaller than the scattering-limited mean free path. The drain-end carrier velocity is smaller than the ultimate satur...

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Bibliographic Details
Main Authors:	Saad, Ismail, Tan, Micheal Loong Peng, Chi, Aaron Enn Lee, Ismail, Razali, Arora, Vijay Kumar
Format:	Article
Language:	English
Published:	Elsevier 2008
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/7501/3/RazaliIsmail2008_ScatteringlimitedandBallisticTransport.pdf

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