Ballistic mobility and saturation velocity in low-dimensional nanostructures
Ohm's law, a linear drift velocity response to the applied electric field, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In the high electric...
Main Authors: | Saad, Ismail, Tan, Michael Loong Peng, Ing, Hui Hii, Ismail, Razali, Arora, Vijay Kumar |
---|---|
Format: | Article |
Language: | English |
Published: |
Elsevier
2009
|
Subjects: | |
Online Access: | http://eprints.utm.my/7505/3/IsmailSaad2009_BallisticMobilityandSaturationVelocity.pdf |
Similar Items
-
Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET
by: Ismail Saad, et al.
Published: (2011) -
Ballistic saturation velocity modelling beyond Ohm's law
by: Ismail Saad, et al.
Published: (2012) -
The ultimate ballistic drift velocity in carbon nanotubes
by: Ahmadi, Mohammad Taghi, et al.
Published: (2008) -
Nano-ballistic saturation Velocity modelling to enhance circuit performances of Nano-Mosfet
by: Ismail Saad
Published: (2010) -
Analytical study of drift velocity in low dimensional devices
by: Ahmadi, Mohammad Taghi, et al.
Published: (2008)