Comparison analysis on scaling the vertical and lateral NMOSFET in nanometer regime
Conventional lateral and vertical n-channel MOS transistors with channel length in the range of 100 nm to 50 nm have been systematically investigated by means of device simulation. The comparison analysis includes critical parameters that govern device performance. Threshold voltage VT roll-off, lea...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
UKM
2008
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| Subjects: | |
| Online Access: | http://eprints.utm.my/7507/3/RazaliIsmail2008_ComparisonAnalysisonScaling.pdf |