Integration of interdigital-gated plasma wave device for proximity communication system application
Interdigital-gated AlGaAs/GaAs high-electron-mobility transistor (HEMT) structure was used to investigate the interaction between the drifting carrier plasma waves and electromagnetic (EM) waves. It was shown theoretically that the interaction in the range from microwave to terahertz (THz) at room t...
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| Format: | Article |
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Elsevier
2007
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