Effect of phosphate buffered saline solutions on top-down fabricated ZnO nanowire field effect transistor
ZnO based nanowire FETs have been fabricated by implementing a top-down approach, which uses optical photolithography, atomic layer deposition (ALD) of ZnO thin film, and anisotropic plasma etching. The effects of Phosphate Buffered Saline (PBS) solution on the surface of ZnO nanowire were investiga...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Hindawi Limited
2017
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| Online Access: | http://eprints.utm.my/76517/1/SMSultan2017_EffectofPhosphateBufferedSalineSolutions.pdf |
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| author | Sultan, S. M. De Planque, M. R. R. Ashburn, P. Chong, H. M. H. |
| author_facet | Sultan, S. M. De Planque, M. R. R. Ashburn, P. Chong, H. M. H. |
| author_sort | Sultan, S. M. |
| collection | ePrints |
| description | ZnO based nanowire FETs have been fabricated by implementing a top-down approach, which uses optical photolithography, atomic layer deposition (ALD) of ZnO thin film, and anisotropic plasma etching. The effects of Phosphate Buffered Saline (PBS) solution on the surface of ZnO nanowire were investigated by measuring the FET characteristics at different PBS dilutions. The drain current, ION, exhibited an increase of 39 times in the highest PBS solution concentration compared to measurement in air. From the measured transfer characteristics and output characteristics in various PBS dilutions, the device was found to maintain n-type behaviour. These results indicate that the device can be effectively used for biomolecules sensing. |
| first_indexed | 2024-03-05T20:12:52Z |
| format | Article |
| id | utm.eprints-76517 |
| institution | Universiti Teknologi Malaysia - ePrints |
| language | English |
| last_indexed | 2024-03-05T20:12:52Z |
| publishDate | 2017 |
| publisher | Hindawi Limited |
| record_format | dspace |
| spelling | utm.eprints-765172018-04-30T13:29:05Z http://eprints.utm.my/76517/ Effect of phosphate buffered saline solutions on top-down fabricated ZnO nanowire field effect transistor Sultan, S. M. De Planque, M. R. R. Ashburn, P. Chong, H. M. H. TK Electrical engineering. Electronics Nuclear engineering ZnO based nanowire FETs have been fabricated by implementing a top-down approach, which uses optical photolithography, atomic layer deposition (ALD) of ZnO thin film, and anisotropic plasma etching. The effects of Phosphate Buffered Saline (PBS) solution on the surface of ZnO nanowire were investigated by measuring the FET characteristics at different PBS dilutions. The drain current, ION, exhibited an increase of 39 times in the highest PBS solution concentration compared to measurement in air. From the measured transfer characteristics and output characteristics in various PBS dilutions, the device was found to maintain n-type behaviour. These results indicate that the device can be effectively used for biomolecules sensing. Hindawi Limited 2017 Article PeerReviewed application/pdf en http://eprints.utm.my/76517/1/SMSultan2017_EffectofPhosphateBufferedSalineSolutions.pdf Sultan, S. M. and De Planque, M. R. R. and Ashburn, P. and Chong, H. M. H. (2017) Effect of phosphate buffered saline solutions on top-down fabricated ZnO nanowire field effect transistor. Journal of Nanomaterials, 2017 . ISSN 1687-4110 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85042530754&doi=10.1155%2f2017%2f5413705&partnerID=40&md5=4a09eb0acb173ecffed3599ce1f58af6 DOI:10.1155/2017/5413705 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Sultan, S. M. De Planque, M. R. R. Ashburn, P. Chong, H. M. H. Effect of phosphate buffered saline solutions on top-down fabricated ZnO nanowire field effect transistor |
| title | Effect of phosphate buffered saline solutions on top-down fabricated ZnO nanowire field effect transistor |
| title_full | Effect of phosphate buffered saline solutions on top-down fabricated ZnO nanowire field effect transistor |
| title_fullStr | Effect of phosphate buffered saline solutions on top-down fabricated ZnO nanowire field effect transistor |
| title_full_unstemmed | Effect of phosphate buffered saline solutions on top-down fabricated ZnO nanowire field effect transistor |
| title_short | Effect of phosphate buffered saline solutions on top-down fabricated ZnO nanowire field effect transistor |
| title_sort | effect of phosphate buffered saline solutions on top down fabricated zno nanowire field effect transistor |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/76517/1/SMSultan2017_EffectofPhosphateBufferedSalineSolutions.pdf |
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