Three-step pulse electrochemical deposition of FeSxOy thin films and their characterization

Three-step pulse electrochemical deposition was used to deposit FeSxOy thin films on indium-tinoxide-coated glass substrates at room temperature from solution containing Na2S2O3 and FeSO4. The deposition was conducted under two different potential shifts direction (condition A: from negative to posi...

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Main Authors: Supee, A., Ichimura, M.
Format: Article
Published: Institute of Physics Publishing 2017
Subjects:
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author Supee, A.
Ichimura, M.
author_facet Supee, A.
Ichimura, M.
author_sort Supee, A.
collection ePrints
description Three-step pulse electrochemical deposition was used to deposit FeSxOy thin films on indium-tinoxide-coated glass substrates at room temperature from solution containing Na2S2O3 and FeSO4. The deposition was conducted under two different potential shifts direction (condition A: from negative to positive and condition B: from positive to negative) with intermediate potential V2 variation. All the deposited films were amorphous. In Raman measurements, peaks attributed to marcasite and Fe1+xS were observed. The O/Fe ratio is larger than unity. The films deposited under condition A with an intermediate potential V2 = 0.6 V and condition B with V2 = 0.4 V showed a band gap which is estimated around 2.3-2.45 eV, larger than literature value of Fe2O3 (2.1 eV). In the photoelectrochemical measurement, nearly intrinsic behavior was confirmed.
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spelling utm.eprints-769292018-04-30T14:26:02Z http://eprints.utm.my/76929/ Three-step pulse electrochemical deposition of FeSxOy thin films and their characterization Supee, A. Ichimura, M. TP Chemical technology Three-step pulse electrochemical deposition was used to deposit FeSxOy thin films on indium-tinoxide-coated glass substrates at room temperature from solution containing Na2S2O3 and FeSO4. The deposition was conducted under two different potential shifts direction (condition A: from negative to positive and condition B: from positive to negative) with intermediate potential V2 variation. All the deposited films were amorphous. In Raman measurements, peaks attributed to marcasite and Fe1+xS were observed. The O/Fe ratio is larger than unity. The films deposited under condition A with an intermediate potential V2 = 0.6 V and condition B with V2 = 0.4 V showed a band gap which is estimated around 2.3-2.45 eV, larger than literature value of Fe2O3 (2.1 eV). In the photoelectrochemical measurement, nearly intrinsic behavior was confirmed. Institute of Physics Publishing 2017 Article PeerReviewed Supee, A. and Ichimura, M. (2017) Three-step pulse electrochemical deposition of FeSxOy thin films and their characterization. Materials Research Express, 4 (3). ISSN 2053-1591 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85016764532&doi=10.1088%2f2053-1591%2faa645e&partnerID=40&md5=9f8d938c1cee689293ab6098923952e4 DOI:10.1088/2053-1591/aa645e
spellingShingle TP Chemical technology
Supee, A.
Ichimura, M.
Three-step pulse electrochemical deposition of FeSxOy thin films and their characterization
title Three-step pulse electrochemical deposition of FeSxOy thin films and their characterization
title_full Three-step pulse electrochemical deposition of FeSxOy thin films and their characterization
title_fullStr Three-step pulse electrochemical deposition of FeSxOy thin films and their characterization
title_full_unstemmed Three-step pulse electrochemical deposition of FeSxOy thin films and their characterization
title_short Three-step pulse electrochemical deposition of FeSxOy thin films and their characterization
title_sort three step pulse electrochemical deposition of fesxoy thin films and their characterization
topic TP Chemical technology
work_keys_str_mv AT supeea threesteppulseelectrochemicaldepositionoffesxoythinfilmsandtheircharacterization
AT ichimuram threesteppulseelectrochemicaldepositionoffesxoythinfilmsandtheircharacterization