Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications

Germanium mono-chalcogenides have received considerable attention for being a promising replacement for the relatively toxic and expensive chalcogenides in renewable and sustainable energy applications. In this paper, we explore the potential of the recently discovered novel cubic structured (π-phas...

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Main Authors: Ul Haq, B., Alfaify, S., Ahmed, R., Butt, F. K., Laref, A., Goumri-Said, S., Tahir, S. A.
Format: Article
Published: American Institute of Physics Inc. 2018
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_version_ 1796863101559111680
author Ul Haq, B.
Alfaify, S.
Ahmed, R.
Butt, F. K.
Laref, A.
Goumri-Said, S.
Tahir, S. A.
author_facet Ul Haq, B.
Alfaify, S.
Ahmed, R.
Butt, F. K.
Laref, A.
Goumri-Said, S.
Tahir, S. A.
author_sort Ul Haq, B.
collection ePrints
description Germanium mono-chalcogenides have received considerable attention for being a promising replacement for the relatively toxic and expensive chalcogenides in renewable and sustainable energy applications. In this paper, we explore the potential of the recently discovered novel cubic structured (π-phase) GeS and GeSe for thermoelectric applications in the framework of density functional theory coupled with Boltzmann transport theory. To examine the modifications in their physical properties, the across composition alloying of π-GeS and π-GeSe (such as π-GeS1- xSex for x =0, 0.25, 0.50, 0.75, and 1) has been performed that has shown important effects on the electronic band structures and effective masses of charge carriers. An increase in Se composition in π-GeS1- xSex has induced a downward shift in their conduction bands, resulting in the narrowing of their energy band gaps. The thermoelectric coefficients of π-GeS1- xSex have been accordingly influenced by the evolution of the electronic band structures and effective masses of charge carriers. π-GeS1- xSex features sufficiently larger values of Seebeck coefficients, power factors and figures of merit (ZTs), which experience further improvement with an increase in temperature, revealing their potential for high-temperature applications. The calculated results show that ZT values equivalent to unity can be achieved for π-GeS1- xSex at appropriate n-type doping levels. Our calculations for the formation enthalpies indicate that a π-GeS1- xSex alloying system is energetically stable and could be synthesized experimentally. These intriguing characteristics make π-GeS1- xSex a promising candidate for futuristic thermoelectric applications in energy harvesting devices.
first_indexed 2024-03-05T20:21:39Z
format Article
id utm.eprints-79746
institution Universiti Teknologi Malaysia - ePrints
last_indexed 2024-03-05T20:21:39Z
publishDate 2018
publisher American Institute of Physics Inc.
record_format dspace
spelling utm.eprints-797462019-01-28T06:50:09Z http://eprints.utm.my/79746/ Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications Ul Haq, B. Alfaify, S. Ahmed, R. Butt, F. K. Laref, A. Goumri-Said, S. Tahir, S. A. QC Physics Germanium mono-chalcogenides have received considerable attention for being a promising replacement for the relatively toxic and expensive chalcogenides in renewable and sustainable energy applications. In this paper, we explore the potential of the recently discovered novel cubic structured (π-phase) GeS and GeSe for thermoelectric applications in the framework of density functional theory coupled with Boltzmann transport theory. To examine the modifications in their physical properties, the across composition alloying of π-GeS and π-GeSe (such as π-GeS1- xSex for x =0, 0.25, 0.50, 0.75, and 1) has been performed that has shown important effects on the electronic band structures and effective masses of charge carriers. An increase in Se composition in π-GeS1- xSex has induced a downward shift in their conduction bands, resulting in the narrowing of their energy band gaps. The thermoelectric coefficients of π-GeS1- xSex have been accordingly influenced by the evolution of the electronic band structures and effective masses of charge carriers. π-GeS1- xSex features sufficiently larger values of Seebeck coefficients, power factors and figures of merit (ZTs), which experience further improvement with an increase in temperature, revealing their potential for high-temperature applications. The calculated results show that ZT values equivalent to unity can be achieved for π-GeS1- xSex at appropriate n-type doping levels. Our calculations for the formation enthalpies indicate that a π-GeS1- xSex alloying system is energetically stable and could be synthesized experimentally. These intriguing characteristics make π-GeS1- xSex a promising candidate for futuristic thermoelectric applications in energy harvesting devices. American Institute of Physics Inc. 2018 Article PeerReviewed Ul Haq, B. and Alfaify, S. and Ahmed, R. and Butt, F. K. and Laref, A. and Goumri-Said, S. and Tahir, S. A. (2018) Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications. Journal of Applied Physics, 123 (17). ISSN 0021-8979 http://dx.doi.org/10.1063/1.5019986 DOI:10.1063/1.5019986
spellingShingle QC Physics
Ul Haq, B.
Alfaify, S.
Ahmed, R.
Butt, F. K.
Laref, A.
Goumri-Said, S.
Tahir, S. A.
Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications
title Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications
title_full Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications
title_fullStr Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications
title_full_unstemmed Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications
title_short Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications
title_sort engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications
topic QC Physics
work_keys_str_mv AT ulhaqb engineeringtheelectronicbandstructuresofnovelcubicstructuredgermaniummonochalcogenidesforthermoelectricapplications
AT alfaifys engineeringtheelectronicbandstructuresofnovelcubicstructuredgermaniummonochalcogenidesforthermoelectricapplications
AT ahmedr engineeringtheelectronicbandstructuresofnovelcubicstructuredgermaniummonochalcogenidesforthermoelectricapplications
AT buttfk engineeringtheelectronicbandstructuresofnovelcubicstructuredgermaniummonochalcogenidesforthermoelectricapplications
AT larefa engineeringtheelectronicbandstructuresofnovelcubicstructuredgermaniummonochalcogenidesforthermoelectricapplications
AT goumrisaids engineeringtheelectronicbandstructuresofnovelcubicstructuredgermaniummonochalcogenidesforthermoelectricapplications
AT tahirsa engineeringtheelectronicbandstructuresofnovelcubicstructuredgermaniummonochalcogenidesforthermoelectricapplications