Modelling of nanoscale MOSFET performance in the velocity saturation region
Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a funct...
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| Format: | Article |
| Language: | English English |
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Faculty of Electrical Engineering
2007
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| Online Access: | http://eprints.utm.my/8071/1/RazaliIsmail2007_ModelingofNanoscaleMOSFETPerformance.pdf http://eprints.utm.my/8071/3/paper7june07_michael_tan.pdf |
| _version_ | 1796854331225407488 |
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| author | Tan, Micheal Loong Peng Ismail, Razali |
| author_facet | Tan, Micheal Loong Peng Ismail, Razali |
| author_sort | Tan, Micheal Loong Peng |
| collection | ePrints |
| description | Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a function of the above parameters. A simplified threshold voltage formulation is developed to provide similar accuracy when compared to actual devices. The models show good agreement with the experimental data over a wide range of gate and drain bias for 90nm process technology. |
| first_indexed | 2024-03-05T18:12:39Z |
| format | Article |
| id | utm.eprints-8071 |
| institution | Universiti Teknologi Malaysia - ePrints |
| language | English English |
| last_indexed | 2024-03-05T18:12:39Z |
| publishDate | 2007 |
| publisher | Faculty of Electrical Engineering |
| record_format | dspace |
| spelling | utm.eprints-80712013-12-02T07:56:13Z http://eprints.utm.my/8071/ Modelling of nanoscale MOSFET performance in the velocity saturation region Tan, Micheal Loong Peng Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a function of the above parameters. A simplified threshold voltage formulation is developed to provide similar accuracy when compared to actual devices. The models show good agreement with the experimental data over a wide range of gate and drain bias for 90nm process technology. Faculty of Electrical Engineering 2007 Article PeerReviewed application/pdf en http://eprints.utm.my/8071/1/RazaliIsmail2007_ModelingofNanoscaleMOSFETPerformance.pdf text/html en http://eprints.utm.my/8071/3/paper7june07_michael_tan.pdf Tan, Micheal Loong Peng and Ismail, Razali (2007) Modelling of nanoscale MOSFET performance in the velocity saturation region. Elektrika, 9 (1). pp. 37-41. ISSN 0128-4428 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Tan, Micheal Loong Peng Ismail, Razali Modelling of nanoscale MOSFET performance in the velocity saturation region |
| title | Modelling of nanoscale MOSFET performance in the velocity saturation region
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| title_full | Modelling of nanoscale MOSFET performance in the velocity saturation region
|
| title_fullStr | Modelling of nanoscale MOSFET performance in the velocity saturation region
|
| title_full_unstemmed | Modelling of nanoscale MOSFET performance in the velocity saturation region
|
| title_short | Modelling of nanoscale MOSFET performance in the velocity saturation region
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| title_sort | modelling of nanoscale mosfet performance in the velocity saturation region |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/8071/1/RazaliIsmail2007_ModelingofNanoscaleMOSFETPerformance.pdf http://eprints.utm.my/8071/3/paper7june07_michael_tan.pdf |
| work_keys_str_mv | AT tanmichealloongpeng modellingofnanoscalemosfetperformanceinthevelocitysaturationregion AT ismailrazali modellingofnanoscalemosfetperformanceinthevelocitysaturationregion |