Modelling of nanoscale MOSFET performance in the velocity saturation region
Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a funct...
| Main Authors: | , |
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| Format: | Article |
| Language: | English English |
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Faculty of Electrical Engineering
2007
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| Subjects: | |
| Online Access: | http://eprints.utm.my/8071/1/RazaliIsmail2007_ModelingofNanoscaleMOSFETPerformance.pdf http://eprints.utm.my/8071/3/paper7june07_michael_tan.pdf |