A 5 GHz CMOS tunable image-rejection low noise amplifier
A 5 GHz image-rejection low-noise amplifier (IR-LNA) was designed using Silterra's CMOS 0.18 µm RF process. The IR-LNA employs a tunable third-order notch filter to reject the image signal. The notch filter was designed using a metal-insulator-metal capacitor (MTM) and a high quality factor (Q...
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| Format: | Conference or Workshop Item |
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2006
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| _version_ | 1825910148259905536 |
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| author | Lee, Ler Chun A'ain, Abu Khairi Kordesch, Albert Victor |
| author_facet | Lee, Ler Chun A'ain, Abu Khairi Kordesch, Albert Victor |
| author_sort | Lee, Ler Chun |
| collection | ePrints |
| description | A 5 GHz image-rejection low-noise amplifier (IR-LNA) was designed using Silterra's CMOS 0.18 µm RF process. The IR-LNA employs a tunable third-order notch filter to reject the image signal. The notch filter was designed using a metal-insulator-metal capacitor (MTM) and a high quality factor (Q) active resonator. The notch frequency of the filter can be tuned using active inductor. The IR-LNA was simulated using HSPICE with BSIM3v3 MOSFET models. Simulation results show that the IR-LNA exhibits S11 of-22.67 dB, S21 of 16.45 dB, S12 of-75.84 dB, 2.66 dB noise figure (NF), and -21.8 dBm input compression point (P1dB) at 5 GHz. The power dissipation of the IR-LNA is 15.46 mW. With an intermediate frequency of 550 MHz, the image-rejection of the notch filter is -16dB. The tuning range of the notch filter is from 3.30 GHz to 4.15 GHz with a maximum -36 dB image rejection. |
| first_indexed | 2024-03-05T18:12:42Z |
| format | Conference or Workshop Item |
| id | utm.eprints-8101 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:12:42Z |
| publishDate | 2006 |
| record_format | dspace |
| spelling | utm.eprints-81012017-09-30T04:31:56Z http://eprints.utm.my/8101/ A 5 GHz CMOS tunable image-rejection low noise amplifier Lee, Ler Chun A'ain, Abu Khairi Kordesch, Albert Victor TK Electrical engineering. Electronics Nuclear engineering A 5 GHz image-rejection low-noise amplifier (IR-LNA) was designed using Silterra's CMOS 0.18 µm RF process. The IR-LNA employs a tunable third-order notch filter to reject the image signal. The notch filter was designed using a metal-insulator-metal capacitor (MTM) and a high quality factor (Q) active resonator. The notch frequency of the filter can be tuned using active inductor. The IR-LNA was simulated using HSPICE with BSIM3v3 MOSFET models. Simulation results show that the IR-LNA exhibits S11 of-22.67 dB, S21 of 16.45 dB, S12 of-75.84 dB, 2.66 dB noise figure (NF), and -21.8 dBm input compression point (P1dB) at 5 GHz. The power dissipation of the IR-LNA is 15.46 mW. With an intermediate frequency of 550 MHz, the image-rejection of the notch filter is -16dB. The tuning range of the notch filter is from 3.30 GHz to 4.15 GHz with a maximum -36 dB image rejection. 2006 Conference or Workshop Item PeerReviewed Lee, Ler Chun and A'ain, Abu Khairi and Kordesch, Albert Victor (2006) A 5 GHz CMOS tunable image-rejection low noise amplifier. In: 2006 International RF and Microwave Conference, (RFM) Proceedings. http://ieeexplore.ieee.org/document/4133573/ |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Lee, Ler Chun A'ain, Abu Khairi Kordesch, Albert Victor A 5 GHz CMOS tunable image-rejection low noise amplifier |
| title | A 5 GHz CMOS tunable image-rejection low noise amplifier
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| title_full | A 5 GHz CMOS tunable image-rejection low noise amplifier
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| title_fullStr | A 5 GHz CMOS tunable image-rejection low noise amplifier
|
| title_full_unstemmed | A 5 GHz CMOS tunable image-rejection low noise amplifier
|
| title_short | A 5 GHz CMOS tunable image-rejection low noise amplifier
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| title_sort | 5 ghz cmos tunable image rejection low noise amplifier |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
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