Analysis and modeling of quantum capacitance on graphene single electron transistor
Graphene single electron transistor (SET) as a coulomb blockade (CB) device operates based on the quantum mechanical effect. Its desired current is achieved by overcoming the CB energy that depends on the total capacitance of SET. Therefore, small size of graphene quantum capacitance is suitable for...
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| Format: | Article |
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World Scientific Publishing Co. Pte Ltd.
2018
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| author | Hosseini, Vahideh Khadem Dideban, Daryoosh Ahmadi, Mohammad Taghi Ismail, Razali |
| author_facet | Hosseini, Vahideh Khadem Dideban, Daryoosh Ahmadi, Mohammad Taghi Ismail, Razali |
| author_sort | Hosseini, Vahideh Khadem |
| collection | ePrints |
| description | Graphene single electron transistor (SET) as a coulomb blockade (CB) device operates based on the quantum mechanical effect. Its desired current is achieved by overcoming the CB energy that depends on the total capacitance of SET. Therefore, small size of graphene quantum capacitance is suitable for SET structure because it plays a dominant role in the total capacitance. In this paper, the density of state (DOS) model of graphene SET is suggested because of its important effect on many physical properties. Furthermore, carrier concentration as a key factor in quantum capacitance is modeled. Finally, the quantum capacitance of graphene SET based on the fundamental parameters is modeled and compared to the experimental data, so an acceptable agreement between them is reported. As a result, silicon SET can be replaced with graphene SET because of its lower quantum capacitance and also higher operation speed than the silicon one. |
| first_indexed | 2024-03-05T20:32:27Z |
| format | Article |
| id | utm.eprints-84304 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T20:32:27Z |
| publishDate | 2018 |
| publisher | World Scientific Publishing Co. Pte Ltd. |
| record_format | dspace |
| spelling | utm.eprints-843042019-12-28T01:46:34Z http://eprints.utm.my/84304/ Analysis and modeling of quantum capacitance on graphene single electron transistor Hosseini, Vahideh Khadem Dideban, Daryoosh Ahmadi, Mohammad Taghi Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering Graphene single electron transistor (SET) as a coulomb blockade (CB) device operates based on the quantum mechanical effect. Its desired current is achieved by overcoming the CB energy that depends on the total capacitance of SET. Therefore, small size of graphene quantum capacitance is suitable for SET structure because it plays a dominant role in the total capacitance. In this paper, the density of state (DOS) model of graphene SET is suggested because of its important effect on many physical properties. Furthermore, carrier concentration as a key factor in quantum capacitance is modeled. Finally, the quantum capacitance of graphene SET based on the fundamental parameters is modeled and compared to the experimental data, so an acceptable agreement between them is reported. As a result, silicon SET can be replaced with graphene SET because of its lower quantum capacitance and also higher operation speed than the silicon one. World Scientific Publishing Co. Pte Ltd. 2018 Article PeerReviewed Hosseini, Vahideh Khadem and Dideban, Daryoosh and Ahmadi, Mohammad Taghi and Ismail, Razali (2018) Analysis and modeling of quantum capacitance on graphene single electron transistor. International Journal of Modern Physics B, 32 (22). ISSN 0217-9792 https://doi.org/10.1142/S0217979218502351 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Hosseini, Vahideh Khadem Dideban, Daryoosh Ahmadi, Mohammad Taghi Ismail, Razali Analysis and modeling of quantum capacitance on graphene single electron transistor |
| title | Analysis and modeling of quantum capacitance on graphene single electron transistor |
| title_full | Analysis and modeling of quantum capacitance on graphene single electron transistor |
| title_fullStr | Analysis and modeling of quantum capacitance on graphene single electron transistor |
| title_full_unstemmed | Analysis and modeling of quantum capacitance on graphene single electron transistor |
| title_short | Analysis and modeling of quantum capacitance on graphene single electron transistor |
| title_sort | analysis and modeling of quantum capacitance on graphene single electron transistor |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| work_keys_str_mv | AT hosseinivahidehkhadem analysisandmodelingofquantumcapacitanceongraphenesingleelectrontransistor AT didebandaryoosh analysisandmodelingofquantumcapacitanceongraphenesingleelectrontransistor AT ahmadimohammadtaghi analysisandmodelingofquantumcapacitanceongraphenesingleelectrontransistor AT ismailrazali analysisandmodelingofquantumcapacitanceongraphenesingleelectrontransistor |