The ultimate ballistic drift velocity in carbon nanotubes
The carriers in a carbon nanotube (CNT), like in any quasi-1-dimensional (Q1D) nanostructure, have analog energy spectrum only in the quasifree direction; while the other two Cartesian directions are quantum-confined leading to a digital (quantized) energy spectrum. We report the salient features of...
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| Format: | Article |
| Language: | English |
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Hindawi Publishing Corporation
2008
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| Online Access: | http://eprints.utm.my/8501/1/MTAhmadi2008-The_Ultimate_Ballistic_Drift_Velocity.pdf |
| _version_ | 1825910206733746176 |
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| author | Ahmadi, Mohammad Taghi Ismail, Razali Tan, Michael L. P. Arora, Vijay K. |
| author_facet | Ahmadi, Mohammad Taghi Ismail, Razali Tan, Michael L. P. Arora, Vijay K. |
| author_sort | Ahmadi, Mohammad Taghi |
| collection | ePrints |
| description | The carriers in a carbon nanotube (CNT), like in any quasi-1-dimensional (Q1D) nanostructure, have analog energy spectrum only in the quasifree direction; while the other two Cartesian directions are quantum-confined leading to a digital (quantized) energy spectrum. We report the salient features of the mobility and saturation velocity controlling the charge transport in a semiconducting single-walled CNT (SWCNT) channel. The ultimate drift velocity in SWCNT due to the high-electric-field streaming is based on the asymmetrical distribution function that converts randomness in zero-field to a stream-lined one in a very high electric field. Specifically, we show that a higher mobility in an SWCNT does not necessarily lead to a higher saturation velocity that is limited by the mean intrinsic velocity depending upon the band parameters. The intrinsic velocity is found to be appropriate thermal velocity in the nondegenerate regime, increasing with the temperature, but independent of carrier concentration. However, this intrinsic velocity is the Fermi velocity that is independent of temperature, but depends strongly on carrier concentration. The velocity that saturates in a high electric field can be lower than the intrinsic velocity due to onset of a quantum emission. In an SWCNT, the mobility may also become ballistic if the length of the channel is comparable or less than the mean free path.
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| first_indexed | 2024-03-05T18:13:38Z |
| format | Article |
| id | utm.eprints-8501 |
| institution | Universiti Teknologi Malaysia - ePrints |
| language | English |
| last_indexed | 2024-03-05T18:13:38Z |
| publishDate | 2008 |
| publisher | Hindawi Publishing Corporation |
| record_format | dspace |
| spelling | utm.eprints-85012017-10-23T07:42:52Z http://eprints.utm.my/8501/ The ultimate ballistic drift velocity in carbon nanotubes Ahmadi, Mohammad Taghi Ismail, Razali Tan, Michael L. P. Arora, Vijay K. TK Electrical engineering. Electronics Nuclear engineering The carriers in a carbon nanotube (CNT), like in any quasi-1-dimensional (Q1D) nanostructure, have analog energy spectrum only in the quasifree direction; while the other two Cartesian directions are quantum-confined leading to a digital (quantized) energy spectrum. We report the salient features of the mobility and saturation velocity controlling the charge transport in a semiconducting single-walled CNT (SWCNT) channel. The ultimate drift velocity in SWCNT due to the high-electric-field streaming is based on the asymmetrical distribution function that converts randomness in zero-field to a stream-lined one in a very high electric field. Specifically, we show that a higher mobility in an SWCNT does not necessarily lead to a higher saturation velocity that is limited by the mean intrinsic velocity depending upon the band parameters. The intrinsic velocity is found to be appropriate thermal velocity in the nondegenerate regime, increasing with the temperature, but independent of carrier concentration. However, this intrinsic velocity is the Fermi velocity that is independent of temperature, but depends strongly on carrier concentration. The velocity that saturates in a high electric field can be lower than the intrinsic velocity due to onset of a quantum emission. In an SWCNT, the mobility may also become ballistic if the length of the channel is comparable or less than the mean free path. Hindawi Publishing Corporation 2008 Article PeerReviewed application/pdf en http://eprints.utm.my/8501/1/MTAhmadi2008-The_Ultimate_Ballistic_Drift_Velocity.pdf Ahmadi, Mohammad Taghi and Ismail, Razali and Tan, Michael L. P. and Arora, Vijay K. (2008) The ultimate ballistic drift velocity in carbon nanotubes. Journal of Nanomaterials, Vol. 2 . ISSN 1687-4129 http://dx.doi.org/10.1155/2008/769250 10.1155/2008/769250 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Ahmadi, Mohammad Taghi Ismail, Razali Tan, Michael L. P. Arora, Vijay K. The ultimate ballistic drift velocity in carbon nanotubes |
| title | The ultimate ballistic drift velocity in carbon nanotubes
|
| title_full | The ultimate ballistic drift velocity in carbon nanotubes
|
| title_fullStr | The ultimate ballistic drift velocity in carbon nanotubes
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| title_full_unstemmed | The ultimate ballistic drift velocity in carbon nanotubes
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| title_short | The ultimate ballistic drift velocity in carbon nanotubes
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| title_sort | ultimate ballistic drift velocity in carbon nanotubes |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/8501/1/MTAhmadi2008-The_Ultimate_Ballistic_Drift_Velocity.pdf |
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