Real space multigrid method for ballistic carbon nanotubes field-effect transistor
This paper is focus on the development of a multigrid method, which is applied and its numerical simulation capability in carbon nanotube field-effect transistor (CNTFET). This research applied multigrid method in fixed size nanotube length, ∼45 nm, and the transistor channel (13, 0) intrinsic carbo...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Published: |
American Scientific Publishers
2018
|
| Subjects: |