Scaling and numerical simulation analysis of 50 nm MOSFET incorporating dielectric pocket (DP-MOSFET)
Characterization of a metal-oxide-semiconductor field effect transistor (MOSFET)incorporating dielectric pocket (DP) for suppression of short-channel effect (SCE) was demonstrated by using numerical simulation. The DP was incorporated between the channel and source/drain of planar MOSFET and was sca...
Main Authors: | M. N., Zul Atfyi Fauzan, Saad, Ismail, Ismail, Razali |
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Format: | Article |
Language: | English |
Published: |
Malaysian Solid State Science and Technology Society
2008
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Subjects: | |
Online Access: | http://eprints.utm.my/8612/1/ZAFauzan2008-Scaling_And_Numerical_Simulation_Analysis.pdf |
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