Design of CMOS tunable image-rejection LNA using active inductor
A fully integrated CMOS tunable image-rejection low-noise amplifier (IRLNA) has been designed using Silterra's industry standard 0.18 µm RF CMOS process. The notch filter is designed using an active inductor. Measurement results show that the notch filter designed using active inductor contrib...
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| Format: | Article |
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Hindawi Publishing Corporation, New York, United States
2008
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| _version_ | 1825910227393839104 |
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| author | Ler, Chun Lee A'ain, Abu Khari Kordesch, A. V. |
| author_facet | Ler, Chun Lee A'ain, Abu Khari Kordesch, A. V. |
| author_sort | Ler, Chun Lee |
| collection | ePrints |
| description | A fully integrated CMOS tunable image-rejection low-noise amplifier (IRLNA) has been designed using Silterra's industry standard 0.18 µm RF CMOS process. The notch filter is designed using an active inductor. Measurement results show that the notch filter designed using active inductor contributes additional 1.19 dB to the noise figure of the low-noise amplifier (LNA). A better result is possible if the active inductor is optimized. Since active inductors require less die area, the die area occupied by the IRLNA is not significantly different from a conventional LNA, which was designed for comparison. The proposed IRLNA exhibits S21 of 11.8 dB, S11 of -17.8 dB, S22 of -10.7 dB, and input 1 dB compression point of -12 dBm at 3 GHz. |
| first_indexed | 2024-03-05T18:13:57Z |
| format | Article |
| id | utm.eprints-8633 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T18:13:57Z |
| publishDate | 2008 |
| publisher | Hindawi Publishing Corporation, New York, United States |
| record_format | dspace |
| spelling | utm.eprints-86332017-10-23T07:58:55Z http://eprints.utm.my/8633/ Design of CMOS tunable image-rejection LNA using active inductor Ler, Chun Lee A'ain, Abu Khari Kordesch, A. V. TK Electrical engineering. Electronics Nuclear engineering A fully integrated CMOS tunable image-rejection low-noise amplifier (IRLNA) has been designed using Silterra's industry standard 0.18 µm RF CMOS process. The notch filter is designed using an active inductor. Measurement results show that the notch filter designed using active inductor contributes additional 1.19 dB to the noise figure of the low-noise amplifier (LNA). A better result is possible if the active inductor is optimized. Since active inductors require less die area, the die area occupied by the IRLNA is not significantly different from a conventional LNA, which was designed for comparison. The proposed IRLNA exhibits S21 of 11.8 dB, S11 of -17.8 dB, S22 of -10.7 dB, and input 1 dB compression point of -12 dBm at 3 GHz. Hindawi Publishing Corporation, New York, United States 2008 Article PeerReviewed Ler, Chun Lee and A'ain, Abu Khari and Kordesch, A. V. (2008) Design of CMOS tunable image-rejection LNA using active inductor. VLSI Design, Vol. 2008 (2). ISSN 1065-514X http://dx.doi.org/10.1155/2008/479173 10.1155/2008/479173 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Ler, Chun Lee A'ain, Abu Khari Kordesch, A. V. Design of CMOS tunable image-rejection LNA using active inductor |
| title | Design of CMOS tunable image-rejection LNA using active inductor |
| title_full | Design of CMOS tunable image-rejection LNA using active inductor |
| title_fullStr | Design of CMOS tunable image-rejection LNA using active inductor |
| title_full_unstemmed | Design of CMOS tunable image-rejection LNA using active inductor |
| title_short | Design of CMOS tunable image-rejection LNA using active inductor |
| title_sort | design of cmos tunable image rejection lna using active inductor |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| work_keys_str_mv | AT lerchunlee designofcmostunableimagerejectionlnausingactiveinductor AT aainabukhari designofcmostunableimagerejectionlnausingactiveinductor AT kordeschav designofcmostunableimagerejectionlnausingactiveinductor |