Interface damage of protective layer in TEM lamella preparation for highly doped ge substrate

This work reports on the TEM sample preparation of highly doped germanium (Ge) sample using focused ion beam (FIB) technique. The method of the deposition of protective layer is varied to observe the damage at the interface of protective layer and specimen surface. It is shown that TEM lamella prepa...

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Main Authors: Mohamad Rashid, N. N., Ahmad Junaidi, N. H., Rahmah Aid, S.
Format: Conference or Workshop Item
Language:English
Published: 2019
Subjects:
Online Access:http://eprints.utm.my/88968/1/NurNadhirahMohamad2019_InterfaceDamageofProtectiveLayer.pdf
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author Mohamad Rashid, N. N.
Ahmad Junaidi, N. H.
Rahmah Aid, S.
author_facet Mohamad Rashid, N. N.
Ahmad Junaidi, N. H.
Rahmah Aid, S.
author_sort Mohamad Rashid, N. N.
collection ePrints
description This work reports on the TEM sample preparation of highly doped germanium (Ge) sample using focused ion beam (FIB) technique. The method of the deposition of protective layer is varied to observe the damage at the interface of protective layer and specimen surface. It is shown that TEM lamella prepared using the FIB inevitably contains the surface damage induced by the deposition of protective layer. An effective method of controlling the damage at the interface of protective layer and specimen surface is by introducing a two-step deposition technique of protective layer using electron beam and ion beam, with smooth interface can be observed when the imaging was performed for the cross-sectional TEM.
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spelling utm.eprints-889682021-01-26T08:36:15Z http://eprints.utm.my/88968/ Interface damage of protective layer in TEM lamella preparation for highly doped ge substrate Mohamad Rashid, N. N. Ahmad Junaidi, N. H. Rahmah Aid, S. T Technology (General) This work reports on the TEM sample preparation of highly doped germanium (Ge) sample using focused ion beam (FIB) technique. The method of the deposition of protective layer is varied to observe the damage at the interface of protective layer and specimen surface. It is shown that TEM lamella prepared using the FIB inevitably contains the surface damage induced by the deposition of protective layer. An effective method of controlling the damage at the interface of protective layer and specimen surface is by introducing a two-step deposition technique of protective layer using electron beam and ion beam, with smooth interface can be observed when the imaging was performed for the cross-sectional TEM. 2019 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/88968/1/NurNadhirahMohamad2019_InterfaceDamageofProtectiveLayer.pdf Mohamad Rashid, N. N. and Ahmad Junaidi, N. H. and Rahmah Aid, S. (2019) Interface damage of protective layer in TEM lamella preparation for highly doped ge substrate. In: 2018 4th International Conference on Smart Material Research, ICSMR 2018, 16-18 Nov 2018, Sydney, Australia. https://dx.doi.org/10.1088/1757-899X/522/1/012003
spellingShingle T Technology (General)
Mohamad Rashid, N. N.
Ahmad Junaidi, N. H.
Rahmah Aid, S.
Interface damage of protective layer in TEM lamella preparation for highly doped ge substrate
title Interface damage of protective layer in TEM lamella preparation for highly doped ge substrate
title_full Interface damage of protective layer in TEM lamella preparation for highly doped ge substrate
title_fullStr Interface damage of protective layer in TEM lamella preparation for highly doped ge substrate
title_full_unstemmed Interface damage of protective layer in TEM lamella preparation for highly doped ge substrate
title_short Interface damage of protective layer in TEM lamella preparation for highly doped ge substrate
title_sort interface damage of protective layer in tem lamella preparation for highly doped ge substrate
topic T Technology (General)
url http://eprints.utm.my/88968/1/NurNadhirahMohamad2019_InterfaceDamageofProtectiveLayer.pdf
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AT ahmadjunaidinh interfacedamageofprotectivelayerintemlamellapreparationforhighlydopedgesubstrate
AT rahmahaids interfacedamageofprotectivelayerintemlamellapreparationforhighlydopedgesubstrate