| Summary: | Quantum dots are zero dimensional structures and therefore have superior transport and optical
properties compared to either 2-dimensional or 3-dimensional structures. Quantum dots show
promise for use in diode lasers, amplifiers, and biological sensors. They are also vigorously
researched for use in solid-state quantum computing. Indium arsenide quantum dots are
currently studied for their use in the photoelectronic and semiconductor fields. In our research,
Indium Arsenide (InAs) quantum dots are grown on Gallium Arsenide (GaAs) substrate using
Metal Organic Vapor Phase Epitaxy (MOVPE) in the Stranski-Krastanov Growth mode.
Several parameters influence the growth of InAs quantum dots greatly. We will be describing
these growth parameters, which we have identified in our current growth attempts. We are
currently trying to achieve device quality InAs/GaAs quantum dots by varying these
parameters we have identified. These growth parameters include the V/III ratio of both InAs
and GaAs, In/As growth temperature, and quantum dot growth time. By carefully fine tuning
the parameters above, we will be able to grow device quality quantum dots. Deviations from
the optimized value will result in either no formation of quantum dots, or the formation of
large islands which are particularly susceptible to dislocations. The effects of differing growth
parameters are observed by using an Atomic Force Microscope (AFM) located at Faculty of
Science, UTM. The MOVPE is located at Ibn Sina Institute for Fundamental Science Studies,
UTM.
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