A study of stoichiometric composition of Ge thermal oxide by X-ray photoelectron spectroscopic depth profiling
The evolution of different oxidation states during thermal oxidation of (100) oriented Ge substrate was investigated with X-ray photoelectron spectroscopic analysis. The thermally grown oxides in the temperature range of 380 to 500°C were found to consist of four different oxidation states of Ge, na...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | http://eprints.utm.my/89647/1/MohammadAnisuzzaman2019_AstudyofStoichiometricCompositionofGeThermal.pdf |