Humidity effect on electrical properties of graphene oxide back-to-back schottky diode
A Schottky diode-based sensor is a promising structure for high sensitive and low power sensor. This paper investigates a device called back-to-back Schottky diode (BBSD) for humidity sensing operation. The BBSD provides simpler device configuration that can be fabricated using less complicated proc...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Universitas Ahmad Dahlan
2019
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| Online Access: | http://eprints.utm.my/89649/1/ShaharinFadzliRahman2019_HumidityEffectonElectricalProperties.pdf |
| _version_ | 1796864871968538624 |
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| author | Rahman, S. F. A. Salleh, N. A. Abidin, M. S. Z. Nawabjan, A. |
| author_facet | Rahman, S. F. A. Salleh, N. A. Abidin, M. S. Z. Nawabjan, A. |
| author_sort | Rahman, S. F. A. |
| collection | ePrints |
| description | A Schottky diode-based sensor is a promising structure for high sensitive and low power sensor. This paper investigates a device called back-to-back Schottky diode (BBSD) for humidity sensing operation. The BBSD provides simpler device configuration that can be fabricated using less complicated process. The current-voltage characteristic of the fabricated BBSD was measured at different relative humidity. From the obtained characteristics, series resistance, barrier height and ideality factor was analyzed. The device current increased at higher humidity level. The current increase could be associated to the decrease in series resistance, barrier height and ideality factor. When humidity decreased from 11% to 97%, the barrier height showed reduction of 0.1 eV. The barrier height reduction was explained by considering electric field-induced reduction of graphene oxide. The observed result confirmed the device feasibility as promising simple and low cost humidity sensor. |
| first_indexed | 2024-03-05T20:48:24Z |
| format | Article |
| id | utm.eprints-89649 |
| institution | Universiti Teknologi Malaysia - ePrints |
| language | English |
| last_indexed | 2024-03-05T20:48:24Z |
| publishDate | 2019 |
| publisher | Universitas Ahmad Dahlan |
| record_format | dspace |
| spelling | utm.eprints-896492021-02-22T01:44:33Z http://eprints.utm.my/89649/ Humidity effect on electrical properties of graphene oxide back-to-back schottky diode Rahman, S. F. A. Salleh, N. A. Abidin, M. S. Z. Nawabjan, A. TK Electrical engineering. Electronics Nuclear engineering A Schottky diode-based sensor is a promising structure for high sensitive and low power sensor. This paper investigates a device called back-to-back Schottky diode (BBSD) for humidity sensing operation. The BBSD provides simpler device configuration that can be fabricated using less complicated process. The current-voltage characteristic of the fabricated BBSD was measured at different relative humidity. From the obtained characteristics, series resistance, barrier height and ideality factor was analyzed. The device current increased at higher humidity level. The current increase could be associated to the decrease in series resistance, barrier height and ideality factor. When humidity decreased from 11% to 97%, the barrier height showed reduction of 0.1 eV. The barrier height reduction was explained by considering electric field-induced reduction of graphene oxide. The observed result confirmed the device feasibility as promising simple and low cost humidity sensor. Universitas Ahmad Dahlan 2019 Article PeerReviewed application/pdf en http://eprints.utm.my/89649/1/ShaharinFadzliRahman2019_HumidityEffectonElectricalProperties.pdf Rahman, S. F. A. and Salleh, N. A. and Abidin, M. S. Z. and Nawabjan, A. (2019) Humidity effect on electrical properties of graphene oxide back-to-back schottky diode. Telkomnika (Telecommunication Computing Electronics and Control), 17 (5). pp. 2427-2433. ISSN 1693-6930 https://dx.doi.org/10.12928/telkomnika.v17i5.12800 DOI:10.12928/telkomnika.v17i5.12800 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Rahman, S. F. A. Salleh, N. A. Abidin, M. S. Z. Nawabjan, A. Humidity effect on electrical properties of graphene oxide back-to-back schottky diode |
| title | Humidity effect on electrical properties of graphene oxide back-to-back schottky diode |
| title_full | Humidity effect on electrical properties of graphene oxide back-to-back schottky diode |
| title_fullStr | Humidity effect on electrical properties of graphene oxide back-to-back schottky diode |
| title_full_unstemmed | Humidity effect on electrical properties of graphene oxide back-to-back schottky diode |
| title_short | Humidity effect on electrical properties of graphene oxide back-to-back schottky diode |
| title_sort | humidity effect on electrical properties of graphene oxide back to back schottky diode |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/89649/1/ShaharinFadzliRahman2019_HumidityEffectonElectricalProperties.pdf |
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