Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
In this paper, we present an experiment study of the photoluminescence properties of self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs). High quality In0.5Ga0.5As QDs were grown by using Metalorganic Chemical Vapor Deposition (MOCVD). The low temperature photoluminescence (PL) spectrum of the In0.5...
Main Authors: | Wahab, Yussof, Yeong, Wai Woon, Derarnan, Karim, Soh, Chew Beng, Muhammad, Rosnita |
---|---|
Format: | Conference or Workshop Item |
Published: |
2006
|
Subjects: |
Similar Items
-
Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006) -
Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots /
by: Yussof Wahab, author, et al.
Published: (2006) -
Evolution of Gaas capping layer on in0.5Ga0.5As/Gaas quantum dots structure
by: Aryanto, Didik, et al.
Published: (2010) -
Surface morphology studies of single and double layer In0.5Ga0.5As/GaAs quantum dots grown by stranski-krastanow growth modes
by: Aryanto, Didik, et al.
Published: (2009) -
Effect of GaAs multi-atomic steps thickness on the structural and optical properties of self-assembled In0.5Ga0.5As quantum dots
by: Aryanto, D., et al.
Published: (2016)