Localization to delocalization probed by magnetotransport of hbn/graphene/hbn stacks in the ultra-clean regime
We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures > ~ 40 K, w...
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Nature Research
2021
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author | Iwasaki, T. Moriyama, M. Ahmad, N. Komatsu, K. Watanabe, K. Taniguchi, T. Wakayama, Y. Hashim, A. M. Morita, Y. Nakaharai, S. |
author_facet | Iwasaki, T. Moriyama, M. Ahmad, N. Komatsu, K. Watanabe, K. Taniguchi, T. Wakayama, Y. Hashim, A. M. Morita, Y. Nakaharai, S. |
author_sort | Iwasaki, T. |
collection | ePrints |
description | We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures > ~ 40 K, whereas it becomes positive for low temperatures ≤ ~ 40 K, which implies an interplay of quantum interferences in Dirac materials. The elastic scattering mechanism in hBN/Gr/hBN stacks contrasts with that of conventional graphene on SiO2, and our ultra-clean graphene device shows nonzero magnetoconductance for high temperatures of up to 300 K. |
first_indexed | 2024-03-05T21:06:29Z |
format | Article |
id | utm.eprints-95617 |
institution | Universiti Teknologi Malaysia - ePrints |
last_indexed | 2024-03-05T21:06:29Z |
publishDate | 2021 |
publisher | Nature Research |
record_format | dspace |
spelling | utm.eprints-956172022-05-31T13:04:30Z http://eprints.utm.my/95617/ Localization to delocalization probed by magnetotransport of hbn/graphene/hbn stacks in the ultra-clean regime Iwasaki, T. Moriyama, M. Ahmad, N. Komatsu, K. Watanabe, K. Taniguchi, T. Wakayama, Y. Hashim, A. M. Morita, Y. Nakaharai, S. T Technology (General) We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures > ~ 40 K, whereas it becomes positive for low temperatures ≤ ~ 40 K, which implies an interplay of quantum interferences in Dirac materials. The elastic scattering mechanism in hBN/Gr/hBN stacks contrasts with that of conventional graphene on SiO2, and our ultra-clean graphene device shows nonzero magnetoconductance for high temperatures of up to 300 K. Nature Research 2021 Article PeerReviewed Iwasaki, T. and Moriyama, M. and Ahmad, N. and Komatsu, K. and Watanabe, K. and Taniguchi, T. and Wakayama, Y. and Hashim, A. M. and Morita, Y. and Nakaharai, S. (2021) Localization to delocalization probed by magnetotransport of hbn/graphene/hbn stacks in the ultra-clean regime. Scientific Reports, 11 (1). ISSN 2045-2322 http://dx.doi.org/10.1038/s41598-021-98266-4 DOI: 10.1038/s41598-021-98266-4 |
spellingShingle | T Technology (General) Iwasaki, T. Moriyama, M. Ahmad, N. Komatsu, K. Watanabe, K. Taniguchi, T. Wakayama, Y. Hashim, A. M. Morita, Y. Nakaharai, S. Localization to delocalization probed by magnetotransport of hbn/graphene/hbn stacks in the ultra-clean regime |
title | Localization to delocalization probed by magnetotransport of hbn/graphene/hbn stacks in the ultra-clean regime |
title_full | Localization to delocalization probed by magnetotransport of hbn/graphene/hbn stacks in the ultra-clean regime |
title_fullStr | Localization to delocalization probed by magnetotransport of hbn/graphene/hbn stacks in the ultra-clean regime |
title_full_unstemmed | Localization to delocalization probed by magnetotransport of hbn/graphene/hbn stacks in the ultra-clean regime |
title_short | Localization to delocalization probed by magnetotransport of hbn/graphene/hbn stacks in the ultra-clean regime |
title_sort | localization to delocalization probed by magnetotransport of hbn graphene hbn stacks in the ultra clean regime |
topic | T Technology (General) |
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