Localization to delocalization probed by magnetotransport of hbn/graphene/hbn stacks in the ultra-clean regime
We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures > ~ 40 K, w...
Main Authors: | Iwasaki, T., Moriyama, M., Ahmad, N., Komatsu, K., Watanabe, K., Taniguchi, T., Wakayama, Y., Hashim, A. M., Morita, Y., Nakaharai, S. |
---|---|
Format: | Article |
Published: |
Nature Research
2021
|
Subjects: |
Similar Items
-
Effect of gap width on electron transport through quantum point contact in hBN/graphene/hBN in the quantum hall regime
by: Ahmad, Nurul Fariha, et al.
Published: (2019) -
Strong and Localized Luminescence from Interface Bubbles Between Stacked hBN Multilayers
by: Hae Yeon Lee, et al.
Published: (2022-08-01) -
Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions
by: J. Tang, et al.
Published: (2022-06-01) -
Unzipping hBN with ultrashort mid-infrared pulses
by: Chen, Cecilia Y., et al.
Published: (2024) -
Spin-Topological Electronic Valve in Ni/hBN–Graphene–hBN/Ni Magnetic Junction
by: Yusuf Wicaksono, et al.
Published: (2023-04-01)