Analytical study of the electronic properties of boron nitride nanosheet
The exploration of potential semiconducting materials for nanoelectronics and optoelectronics applications for post-silicon era has attracted significant attention from researchers. The two-dimensional (2D) boron nitride nanosheet (BNNS) is among the candidates due to its analogous structure and sup...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
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2017
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| _version_ | 1796866364761178112 |
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| author | Lim, Wei Hong Hamzah, Afiq Ahmadi, Mohammad Taghi Ismail, Razali |
| author_facet | Lim, Wei Hong Hamzah, Afiq Ahmadi, Mohammad Taghi Ismail, Razali |
| author_sort | Lim, Wei Hong |
| collection | ePrints |
| description | The exploration of potential semiconducting materials for nanoelectronics and optoelectronics applications for post-silicon era has attracted significant attention from researchers. The two-dimensional (2D) boron nitride nanosheet (BNNS) is among the candidates due to its analogous structure and supreme properties with the graphene, and yet, retains several extraordinary characteristics especially in term of its stability. To provide more understandings of the BNNS, the analytical study is carried out based on the schematic structure of BNNS using the Nearest Neighbour Tight Binding (NNTB) model. Electronic properties such as the dispersion relation and the density of state (DOS) are modelled. Furthermore, the impacts of the on-site energy and the hopping integral to the band structure are also studied. The result shows that the on-site energy has a significant effect on the band gap while the hopping integral is accountable for the shape of the band structure. The model exhibits good agreement with the computational published results of the band gap 4.57-4.6eV. |
| first_indexed | 2024-03-05T21:11:02Z |
| format | Conference or Workshop Item |
| id | utm.eprints-97144 |
| institution | Universiti Teknologi Malaysia - ePrints |
| last_indexed | 2024-03-05T21:11:02Z |
| publishDate | 2017 |
| record_format | dspace |
| spelling | utm.eprints-971442022-09-15T06:46:13Z http://eprints.utm.my/97144/ Analytical study of the electronic properties of boron nitride nanosheet Lim, Wei Hong Hamzah, Afiq Ahmadi, Mohammad Taghi Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering The exploration of potential semiconducting materials for nanoelectronics and optoelectronics applications for post-silicon era has attracted significant attention from researchers. The two-dimensional (2D) boron nitride nanosheet (BNNS) is among the candidates due to its analogous structure and supreme properties with the graphene, and yet, retains several extraordinary characteristics especially in term of its stability. To provide more understandings of the BNNS, the analytical study is carried out based on the schematic structure of BNNS using the Nearest Neighbour Tight Binding (NNTB) model. Electronic properties such as the dispersion relation and the density of state (DOS) are modelled. Furthermore, the impacts of the on-site energy and the hopping integral to the band structure are also studied. The result shows that the on-site energy has a significant effect on the band gap while the hopping integral is accountable for the shape of the band structure. The model exhibits good agreement with the computational published results of the band gap 4.57-4.6eV. 2017 Conference or Workshop Item PeerReviewed Lim, Wei Hong and Hamzah, Afiq and Ahmadi, Mohammad Taghi and Ismail, Razali (2017) Analytical study of the electronic properties of boron nitride nanosheet. In: 11th IIEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017, 23 - 25 August 2017, Batu Ferringhi, Penang. http://dx.doi.org/10.1109/RSM.2017.8069115 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Lim, Wei Hong Hamzah, Afiq Ahmadi, Mohammad Taghi Ismail, Razali Analytical study of the electronic properties of boron nitride nanosheet |
| title | Analytical study of the electronic properties of boron nitride nanosheet |
| title_full | Analytical study of the electronic properties of boron nitride nanosheet |
| title_fullStr | Analytical study of the electronic properties of boron nitride nanosheet |
| title_full_unstemmed | Analytical study of the electronic properties of boron nitride nanosheet |
| title_short | Analytical study of the electronic properties of boron nitride nanosheet |
| title_sort | analytical study of the electronic properties of boron nitride nanosheet |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| work_keys_str_mv | AT limweihong analyticalstudyoftheelectronicpropertiesofboronnitridenanosheet AT hamzahafiq analyticalstudyoftheelectronicpropertiesofboronnitridenanosheet AT ahmadimohammadtaghi analyticalstudyoftheelectronicpropertiesofboronnitridenanosheet AT ismailrazali analyticalstudyoftheelectronicpropertiesofboronnitridenanosheet |