Modelling and simulation of nanostructure for single electron transitors
Semiconductor clusters have occupied the centre of scientific interest because of their unique electronic nature. Among the group III-V compound clusters, the gallium arsenide clusters have been the focus of this research due to their importance in constructing fast microelectric devices. The electr...
| Principais autores: | , , |
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| Formato: | Monograph |
| Idioma: | English |
| Publicado em: |
Faculty of Science
2009
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| Assuntos: | |
| Acesso em linha: | http://eprints.utm.my/9754/1/78237.pdf |