Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs by F. Elmourabit, S. Dlimi, A. El Moutaouakil, F. Id Ouissaaden, A. Khoukh, L. Limouny, H. Elkhatat, A. El Kaaouachi

“…By examining the extrapolated conductivity at the absolute zero temperature (<i>T</i> = 0), denoted as <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mi>σ</mi></mrow><mrow><mn>0</mn></mrow></msub></mrow></semantics></math></inline-formula>, as a function of the electron density <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mi>n</mi></mrow><mrow><mi>s</mi></mrow></msub></mrow></semantics></math></inline-formula>, we identify two distinct regimes with varying <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mrow><mi>σ</mi></mrow><mrow><mn>0</mn></mrow></msub><mo>(</mo><msub><mrow><mi>n</mi></mrow><mrow><mi>s</mi></mrow></msub><mo>)</mo></mrow></semantics></math></inline-formula> patterns, indicating the existence of two different phases. …”
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