Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs by Sajjad, Redwan Noor, Chern, Winston, Hoyt, Judy L, Antoniadis, Dimitri A

“…Our results are applicable to top gate, double gate, and gate-all-around structures, where the traps are positioned between the source-channel tunneling regions. Since the TAT has strong dependence on electric field, any effort to increase the BTBT current by enhancing local electric field also increases the leakage current. …”
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