Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN by Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Liu, Zhi Hong, Ranjan, Kumud, Ang, Kian Siong

“…The gate leakage current mechanism of AlGaN/GaN Schottky barrier diodes (SBDs) and high-electron-mobility transistors (HEMTs) with sputtered TiN is systematically investigated. …”
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High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate by Arulkumaran, Subramaniam, Ranjan, K., Ng, G. I., Manoj Kumar, C. M., Vicknesh, S., Dolmanan, S. B., Tripathy, S.

“…We report for the first time high-frequency microwave noise performance on 0.17-μm T-gate In0.17Al0.83N/GaN high-electron mobility transistors (HEMTs) fabricated on Si(111). …”
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Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy by Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, M., Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth E., Ing, Ng Geok

“…We demonstrate, for the first time, crack-free AlGaN/GaN high-electron-mobility transistors (HEMT) on 100 mm Si(111) by ammonia molecular beam epitaxy. …”
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Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate by Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Tan, Joyce Pei Ying, Lin, Vivian Kaixin, Todd, Shane, Lo, Guo-Qiang, Tripathy, Sudhiranjan

“…We report for the first time the DC and microwave characteristics of sub-micron gate (∼0.3 µm) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. …”
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Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon by Ye, G., Wang, Hong, Arulkumaran, Subramaniam, Ng, Geok Ing, Hofstetter, R., Li, Y., Anand, M. J., Ang, K. S., Bryan, Maung Ye Kyaw Thu, Foo, Siew Chuen

“…In this Letter, the device performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using 10-nm-thick atomic-layer-deposited ZrO2 as gate dielectrics is reported. …”
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Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors by Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Manoj Kumar, Chandra Mohan, Anand, Mulagumoottil Jesudas, Liu, Zhi Hong

“…This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current–voltage (I–V) measurements reveal that the conduction occurs primarily via thermionic emission (TE). …”
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First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding by Li, Hanchao, Xie, Hanlin, Wang, Yue, Yulia, Lekina, Ranjan, Kumud, Singh, Navab, Chung, Surasit, Lee, Kenneth E., Arulkumaran, Subramaniam, Ng, Geok Ing

“…In0.17Al0.83N/GaN high-electron-mobility transistor (HEMT) using GaN-on-Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance and high fT/fmax. …”
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Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon by Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Manoj Kumar, Chandra Mohan, Ang, Kian Siong, Anand, Mulagumoottil Jesudas, Wang, Hong, Hofstetter, René, Ye, Gang

“…Low-contact-resistance (Rc) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. …”
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Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress by Tan, H. T., Gao, Y., Syaranamual, G. J., Sasangka, W. A., Foo, Siew Chuen, Lee, K. H., Arulkumaran, Subramaniam, Ng, Geok Ing, Thompson, C. V., Gan, Chee Lip

Subjects: “…AlGaN/GaN High Electron Mobility Transistors…”
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A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression by Zhang, Junbin, Syamal, Binit, Zhou, Xing, Arulkumaran, Subramaniam, Ng, Geok Ing

“…With the unified Ef model, a surface-potential (φs) based drain-current (Ids) model for the metal-insulator-semiconductor (MIS) high electron-mobility transistor (HEMT) is developed. Nonlinear source/drain access region resistances ( Rs and Rd) can also be modeled via a subcircuit, including an empirical Rs model for capturing the current-collapse effect. …”
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Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation by Vicknesh, Sahmuganathan, Arulkumaran, Subramaniam, Ng, Geok Ing

“…An effective suppression of drain current collapse was realized in both Enhancement (E)-mode and Depletion (D)-mode AlGaN/GaN High-electron-mobility-transistors (HEMTs) on 4-inch Silicon (111) by ammonium sulfide [(NH4)2Sx] passivation. …”
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High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon by Ranjan, Kumud, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan

“…AlGaN/GaN high-electron-mobility transistors (HEMTs) with a 0.15-µm gate were fabricated on a Si substrate with an 8-nm-thick AlGaN barrier. …”
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Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal by Arulkumaran, Subramaniam, Ng, Geok Ing, Ranjan, Kumud, Kumar, Chandra Mohan Manoj, Foo, Siew Chuen, Ang, Kian Siong, Vicknesh, Sahmuganathan, Dolmanan, Surani Bin, Bhat, Thirumaleshwara, Tripathy, Sudhiranjan

“…We have demonstrated 0.17-µm gate-length In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) on Si(111) substrates using a non-gold metal stack (Ta/Si/Ti/Al/Ni/Ta) with a record-low ohmic contact resistance (Rc) of 0.36 Ω mm. …”
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Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack by Anand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, Subramaniam, Ranjan, K.

“…We have studied the drain current dispersion characteristics of conventional AlGaN/GaN HEMTs and SiN/Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMT) fabricated on silicon substrate. …”
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Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN by Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong

“…The findings provide important process guidelines for the use of ALD ZrO2 and its pre-ALD surface treatments for high-k AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors and other related device applications.…”
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AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) by Dolmanan, S. B., Kajen, R. S., Bera, L. K., Teo, S. L., Wang, W. Z., Li, H., Lee, D., Han, S., Tripathy, Sudhiranjan, Lin, Vivian Kaixin, Tan, Joyce Pei Ying, Kumar, M. Krishna, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Todd, Shane, Lo, Guo-Qiang

“…The fabricated 1.5 μm-gate AlGaN/GaN high-electron-mobility transistors exhibited the drain current density of 660 mA/mm and extrinsic transconductance of 210 mS/mm. …”
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Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate by Whiteside, Matthew, Arulkumaran, Subramaniam, Dikme, Yilmaz, Sandupatla, Abhinay, Ng, Geok Ing

“…AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 °C were studied. …”
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High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon by Vicknesh, S., Ng, G. I., Liu, Z. H., Selvaraj, S. L., Egawa, T., Arulkumaran, Subramaniam

“…Off-state and vertical breakdown characteristics of AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) on high-resistivity (HR)-Si substrate were investigated and analysed. …”
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