Performance evaluation of 14nm FinFET-based 6T SRAM cell functionality for DC and transient circuit analysis by Lim, Wei, Chin, Huei Chaeng, Lim, Cheng Siong, Tan, Michael Loong Peng

“…Ideal square wave and square wave with 100 RC, 5 RC, 1 RC, and 0.5 RC are asserted to the WL and the bit lines (BL&BLB) of SRAM. …”
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