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Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor
Published 2022-09-01“…This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silvaco. …”
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Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal
Published 2020-01-01“…The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated. …”
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Improved I<sub>on</sub>/I<sub>off</sub> Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al<sub>0.5</sub>GaN Etch-Stop Layer
Published 2022-05-01“…In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al<sub>0.5</sub>GaN etch-stop layer. …”
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Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
Published 2021-10-01“…In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). …”
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The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design
Published 2020-12-01“…In this study, a 50-nm Al<sub>0.05</sub>Ga<sub>0.95</sub>N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. …”
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Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al<sub>2</sub>O<sub>3</sub>/AlN Composite Gate Insulator
Published 2021-09-01“…A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al<sub>2</sub>O<sub>3</sub>/AlN gate insulator layer deposited through atomic layer deposition was investigated. …”
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High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate
Published 2021-05-01“…Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. …”
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