Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor by You-Chen Weng, Chih-Chiang Wu, Edward Yi Chang, Wei-Hua Chieng

“…In this study, we implemented a depletion (D)-mode gallium nitride high electron mobility transistor (GaN HEMT, which has the advantage of having no body diode) in a class-E amplifier. …”
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Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer by Kuo-Bin Hong, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang, Chun-Hsiung Lin

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Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration by Lung-Hsing Hsu, Yung-Yu Lai, Po-Tsung Tu, Catherine Langpoklakpam, Ya-Ting Chang, Yu-Wen Huang, Wen-Chung Lee, An-Jye Tzou, Yuh-Jen Cheng, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang

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The Evolution of Manufacturing Technology for GaN Electronic Devices by An-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang

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Modulating Light Emission Performance of PCSEL via GaN HEMT Driving Circuit by Yu-Heng Hong, Ching-Yao Liu, Jun-Da Chen, Chun-Yen Peng, Li-Chuan Tang, Tien-Chang Lu, Chun-Hsiung Lin, Wei-Hua Chieng, Edward Yi Chang, Shih-Chen Chen, Hao-Chung Kuo

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Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array by Hsin-Ying Lee, Day-Shan Liu, Jen-Inn Chyi, Edward Yi Chang, Ching-Ting Lee

Subjects: “…double-channel metal oxide semiconductor high-electron mobility transistors…”
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Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs by Pragyey Kumar Kaushik, Sankalp Kumar Singh, Ankur Gupta, Ananjan Basu, Edward Yi Chang

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Dynamic on‐state resistance instability characterization of a multi‐chip‐GaN MIS‐HEMTs cascode power module by Surya Elangovan, Stone Cheng, Wen‐Yea Jang, Edward Yi Chang

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Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress by Surya Elangovan, Edward Yi Chang, Stone Cheng

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Derivation of the Resonance Mechanism for Wireless Power Transfer Using Class-E Amplifier by Ching-Yao Liu, Guo-Bin Wang, Chih-Chiang Wu, Edward Yi Chang, Stone Cheng, Wei-Hua Chieng

“…The depletion mode of a gallium nitride high-electron-mobility transistor (GaN HEMT) was used to switch the states in a class-E amplifier circuit in this high frequency. …”
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Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications by Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang

“…In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. …”
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Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications by Surya Elangovan, Stone Cheng, Edward Yi Chang

“…We present a detailed study of dynamic switching instability and static reliability of a Gallium Nitride (GaN) Metal-Insulator-Semiconductor High-Electron-Mobility-Transistor (MIS-HEMT) based cascode switch under off-state (negative bias) Gate bias stress (V_{GS, OFF}). …”
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Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications by Ming-Wen Lee, Yueh-Chin Lin, Po-Sheng Chang, Yi-Fan Tsao, Heng-Tung Hsu, Chang-Fu Dee, Edward Yi Chang

“…This study reports AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated by the Stepper Lithography on a 4-inch wafer for Ka-Band applications. …”
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