-
1
Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor
Published 2022-09-01“…This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silvaco. …”
Get full text
Article -
2
Improved I<sub>on</sub>/I<sub>off</sub> Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al<sub>0.5</sub>GaN Etch-Stop Layer
Published 2022-05-01“…In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al<sub>0.5</sub>GaN etch-stop layer. …”
Get full text
Article -
3
Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
Published 2021-10-01“…In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). …”
Get full text
Article -
4
The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design
Published 2020-12-01“…In this study, a 50-nm Al<sub>0.05</sub>Ga<sub>0.95</sub>N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. …”
Get full text
Article -
5
A 5-Bit X-Band GaN HEMT-Based Phase Shifter
Published 2021-03-01“…In this study, we propose a 5-bit X-band gallium nitride (GaN) high electron mobility transistor (HEMT)-based phased shifter monolithic microwave integrated circuit for a phased-array technique. …”
Get full text
Article -
6
Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al<sub>2</sub>O<sub>3</sub>/AlN Composite Gate Insulator
Published 2021-09-01“…A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al<sub>2</sub>O<sub>3</sub>/AlN gate insulator layer deposited through atomic layer deposition was investigated. …”
Get full text
Article -
7
High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate
Published 2021-05-01“…Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. …”
Get full text
Article -
8
On-Chip Voltage-Controlled Oscillator Based on a Center-Tapped Switched Inductor Using GaN-on-SiC HEMT Technology
Published 2021-11-01“…To the best of the author’s knowledge, the FTR in VCOs made of GaN-based high electron mobility transistors is the widest reported thus far.…”
Get full text
Article