Dynamics of single InGaN quantum dots by Taylor, R, Robinson, J, Rice, J, Jarjour, A, Smith, J, Oliver, R, Briggs, G, Kappers, M, Humphreys, C, Arakawa, Y

“…Decay dynamics for single InGaN quantum dots are presented using time-resolved photoluminescence. …”

Cavity Enhancement of Single Quantum Dot Emission in the Blue by Taylor, R, Jarjour, A, Collins, D, Holmes, M, Oliver, R, Kappers, M, Humphreys, C

Cavity Enhancement of single quantum dot emission in the blue by Taylor, R, Jarjour, A, Collins, D, Holmes, M, Oliver, R, Kappers, M, Humphreys, C

“…Cavity-enhanced single-photon emission in the blue spectral region was measured from single InGaN/GaN quantum dots. The low-Q microcavities used were characterized using micro-reflectance spectroscopy where the source was the enhanced blue output from a photonic crystal fibre. …”

Time-resolved dynamics in single InGaN quantum dots by Taylor, R, Robinson, J, Rice, J, Lee, K, Jarjour, A, Na, J, Yasin, S, Oliver, R, Kappers, M, Humphreys, C, Andrew, G, Briggs, D, Williams, D, O'Reilly, E, Andreev, A, Arakawa, Y

“…We present measurements of microphotoluminescence decay dynamics for single InGaN quantum dots. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the two-dimensional wetting layer. …”

Time-resolved dynamics in single InGaN quantum dots by Robinson, J, Rice, J, Jarjour, A, Smith, J, Taylor, R, Oliver, R, Briggs, G, Kappers, M, Humphreys, C, Arakawa, Y

3D atom probe analysis of quantum well and quantum dot materials by Cerezo, A, Chang, L, Clifton, P, Galtrey, M, Gerstl, S, Humphreys, C, Müller, M, Oliver, R, Smith, G, Wu, Y

Temporal variation in photoluminescence from single InGaN quantum dots by Rice, J, Robinson, J, Jarjour, A, Taylor, R, Oliver, R, Briggs, G, Kappers, M, Humphreys, C

Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots by Rice, J, Robinson, J, Smith, J, Jarjour, A, Taylor, R, Oliver, R, Briggs, G, Kappers, M, Yasin, S, Humphreys, C

Non-linear excitation and correlation studies of single InGaN quantum dots by Collins, D, Jarjour, A, Taylor, R, Hadjipanayi, M, Oliver, R, Kappers, M, Humphreys, C, Tahraoui, A

“…The exact mechanism for non-linear sub-bandgap excitation of single InGaN quantum dots (QDs) has been investigated using interferometric autocorrelation techniques based around a near-infrared (NIR) excitation laser. …”

Electrically driven single InGaN/GaN quantum dot emission by Jarjour, A, Taylor, R, Oliver, R, Kappers, M, Humphreys, C, Tahraoui, A

Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots by Robinson, J, Rice, J, Jarjour, A, Smith, J, Taylor, R, Oliver, R, Briggs, G, Kappers, M, Humphreys, C, Yasin, S, Arakawa, Y

“…We present studies of the optical transitions in InGaN quantum dots (QDs). Spatially-resolved micro-photoluminescence (mu-PL) of single InGaN QDs reveals very sharp, clearly-defined peaks that are characteristic of strongly-confined carriers. …”

Non-linear excitation and correlation studies of single InGaN quantum dots by Collins, D, Jarjour, A, Taylor, R, Hadjipanayi, M, Oliver, R, Kappers, M, Humphreys, C, Tahraoui, A

Two-photon absorption from single InGaN/GaN quantum dots by Jarjour, A, Green, A, Parker, T, Taylor, R, Oliver, R, Briggs, G, Kappers, M, Humphreys, C, Martin, R, Watson, I

“…We present a study of the time-integrated and time-resolved photo luminescence properties of single-InGaN/GaN quantum dots (QDs) using two-photon spectroscopy. Two samples containing QDs produced by different growth techniques are examined. …”

InGaN quantum dots grown by MOVPE via a droplet epitaxy route by Rice, J, Oliver, R, Robinson, J, Smith, J, Taylor, R, Briggs, G, Kappers, M, Humphreys, C, Yasin, S

“…A novel method for the growth of InGaN quantum dots (QDs) by metal-organic vapour phase epitaxy (MOVPE) is described. …”

Simulation of the quantum-confined stark effect in a single InGaN quantum dot by Lee, K, Robinson, J, Rice, J, Na, J, Taylor, R, Oliver, R, Kappers, M, Humphreys, C

“…By means of a 3D self-consistent numerical simulation we have calculated the effect of an externally-applied lateral electric field upon a single InGaN quantum dot. Overall, good agreement between the modeling and experimental results was observed. …”

Optical studies of non-linear absorption in single InGaN/GaN quantum dots by Jarjour, A, Taylor, R, Martin, R, Watson, I, Oliver, R, Briggs, G, Kappers, M, Humphreys, C

“…Nficro-photoluminescence properties of single InGaN/GaN quantum dots (QDs) are investigated using sub-bandgap excitation by 1 ps pulses from a Ti:sapphire laser. …”

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot. by Collins, D, Jarjour, A, Hadjipanayi, M, Taylor, R, Oliver, R, Kappers, M, Humphreys, C, Tahraoui, A

“…We report on the use of interferometric autocorrelation measurements to investigate the non-linear absorption processes evident in single InGaN/GaN quantum dots. The near quadratic excitation intensity dependence of the photoluminescence signal in conjunction with the asymmetric collinear autocorrelation trace unambiguously confirms the process as being one involving two photons via an intermediate virtual state. …”

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot by Jarjour, A, Oliver, R, Tahraoui, A, Kappers, M, Humphreys, C, Taylor, R

“…We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. …”

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot. by Jarjour, A, Oliver, R, Tahraoui, A, Kappers, M, Humphreys, C, Taylor, R

“…We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. …”

Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source by Oliver, R, Jarjour, A, Taylor, R, Tahraoui, A, Zhang, Y, Kappers, M, Humphreys, C

“…Using a modified droplet epitaxy approach in metal-organic vapour phase epitaxy (MOVPE), we have grown InGaN quantum dots (QDs) on top of a 20-period AlN/GaN distributed Bragg reflector (DBR). …”