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1
4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics
Published 2021-06-01Get full text
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2
A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
Published 2021-12-01Get full text
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3
High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
Published 2022-09-01Get full text
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4
3.3-kV 4H-SiC Split-Gate DMOSFET with Floating p+ Polysilicon for High-Frequency Applications
Published 2021-03-01Get full text
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5
4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance
Published 2020-09-01Get full text
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6
Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s
Published 2020-11-01Get full text
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7
A Novel 4H-SiC Double Trench MOSFET with Built-In MOS Channel Diode for Improved Switching Performance
Published 2022-12-01Get full text
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8
Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications
Published 2021-11-01Get full text
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