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The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxy
Published 2023-09-01“…We are able to grow strain-free Mn3Sn(10 1¯ 0) films or alternatively strained Mn3Sn(11 2¯ 0) films via a three-step process. The strain-free Mn3Sn film has large anomalous Hall conductivity up to 30 Ω-1cm−1 at room temperature, which is comparable to bulk Mn3Sn. …”
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