The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxy by Jiahui Liu, Zhen Zhang, Maoxiang Fu, Xiaonan Zhao, Ronghuan Xie, Qiang Cao, Lihui Bai, Shishou Kang, Yanxue Chen, Shishen Yan, Liangmo Mei, Guolei Liu

“…We are able to grow strain-free Mn3Sn(10 1¯ 0) films or alternatively strained Mn3Sn(11 2¯ 0) films via a three-step process. The strain-free Mn3Sn film has large anomalous Hall conductivity up to 30 Ω-1cm−1 at room temperature, which is comparable to bulk Mn3Sn. …”
Get full text