Monolithic integration of heterojunction bipolar transistors and high electron mobility transistors by Radhakrishnan, K., Ng, Geok Ing., Yoon, Soon Fatt.

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Growth and characterization of metamorphic layer structures for high electron mobility transistors by Yuan, Kaihua.

“…InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and low noise performance. …”
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Characterization of InP based high electron mobility transistor structures grown by solid source MBE by Too, Patrick Heng Kwee.

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Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Ranjan, A., Seah, Alex Tian Long, Huo, Lili

“…Unintentionally doped (UID) AlGaN/GaN-based multichannel high electron mobility transistor (MC-HEMT) heterostructures have been demonstrated on the SiC substrate using plasma-assisted molecular beam epitaxy. …”
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Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy by Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, M., Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth E., Ing, Ng Geok

“…We demonstrate, for the first time, crack-free AlGaN/GaN high-electron-mobility transistors (HEMT) on 100 mm Si(111) by ammonia molecular beam epitaxy. …”
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Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap state by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Huo, Lili

“…Multichannel high electron mobility transistor (MC-HEMT) heterostructures are one of the choices for improved power performance of GaN HEMTs. …”
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Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy by Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, Lin, Arulkumaran, S., Vicknesh, S., Ng, G. I.

“…To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. …”
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In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, Manvi

“…Reasonably good uniformity in electrical characteristics with a standard deviation of 7%, 1% and 8% for the sheet resistance, carrier concentration and mobility, respectively, were achieved for GaN high-electron-mobility transistor heterostructures across the 100 mm substrate.…”
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Development of thin film structures for heterojunction bipolar transistors (HBTs) by Radhakrishnan, K., Yoon, Soon Fatt., Tse, Man Siu.

“…Based on this experience, several high electron mobility transistor devices have been fabricated and characterized.…”
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Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy by Huo, Lili, Lingaparthi, Ravikiran, Dharmarasu, Nethaji, Radhakrishnan, K., Chan, Casimir

“…Without Si doping, the N-polar GaN high electron mobility transistor (HEMT) heterostructures grown under optimized conditions with smoother surface morphologies exhibited a sheet carrier density of 0.91 × 1013 cm−2 and a mobility of 1220 cm2 (V s)−1. …”
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Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning by Razeen, Ahmed S., Kotekar-Patil, Dharmraj, Jiang, Mengting, Tang, Eric X., Yuan, Gao, Ong, Jesper, Wyen, Viet C., Radhakrishnan, K., Tripathy, Sudhiranjan

“…AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high-performance Ultraviolet photodetectors (UV PDs), especially using the metal-semiconductor-metal (MSM) configuration. …”
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Enhanced performance of ultraviolet AlGaN/GaN photo-HEMTs by optimized channel isolation schemes by Mondal, Ramit Kumar, Xiong, Zhongshu, Ghimire, Mohan Kumar, Lingaparthi, Ravikiran, Nethaji, Dharmarasu, Radhakrishnan, K., Kim, Munho

“…Solar blind ultraviolet (UV) photodetectors utilizing AlGaN/GaN high electron mobility transistor (HEMT) structure offer a very high responsivity, photo-to-dark current ratio (PDCR), and detectivity. …”
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