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A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect
Published 2022-09-01Get full text
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Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials
Published 2021-01-01Get full text
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A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
Published 2020-10-01Get full text
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Preparation and Research of Monolayer WS<sub>2</sub> FETs Encapsulated by h-BN Material
Published 2021-08-01Get full text
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Probing the electrical performance improvement of FET device based on multilayer MoS2 material
Published 2023-01-01Get full text
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Fabrication and Characterization of MoS<sub>2</sub>/h-BN and WS<sub>2</sub>/h-BN Heterostructures
Published 2020-12-01Get full text
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