Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures. by Wang, T, Puchtler, T, Patra, S, Zhu, T, Jarman, J, Oliver, R, Schulz, S, Taylor, R

“…We report the successful realisation of intrinsic optical polarisation control by growth, in solid-state quantum dots in the thermoelectrically cooled temperature regime (≥200 K), using a non-polar InGaN system. …”

Dataset: Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures by Wang, T, Puchtler, T, Patra, S, Schulz, S, Taylor, R

“…These data were created in order to assess the high temperature polarisation properties of a-plane InGaN quantum dots, in micro-photoluminescence experiments and kp band simulations, from 2015 to 2017. …”

Temperature-dependent fine structure splitting in InGaN quantum dots by Wang, T, Puchtler, T, Zhu, T, Jarman, J, Kocher, C, Oliver, R, Taylor, R

“…We report the experimental observation of temperature-dependent fine structure splitting in semiconductor quantum dots using a non-polar (11-20) a-plane InGaN system, up to the on-chip Peltier cooling threshold of 200 K. …”

Temperature-dependent fine structure splitting in InGaN quantum dots: Dataset by Wang, T, Puchtler, T

“…The data was obtained with microphotoluminescence, and analysed with the OriginPro software, between 2016 and 2017, in order to assess whether the fine structure splitting of InGaN quantum dots changes with temperature. Contains data for Fig. 1-3 in paper "Temperature-dependent fine structure splitting in InGaN quantum dots"…”

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots by Wang, T, Puchtler, T, Patra, S, Zhu, T, Ali, M, Badcock, T, Ding, T, Oliver, R, Schulz, S, Taylor, R

“…We report the direct generation of linearly polarized single photons with a deterministic polarization axis in self-assembled quantum dots (QDs), achieved by the use of non-polar InGaN without complex device geometry engineering. …”

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots: Dataset by Wang, T, Puchtler, T, Taylor, R, Schulz, S, Patra, S

“…The data were created to demonstrate the rigorous generation of polarised single photons with a deterministic axis, and to explain the origin of high polarisation degree and fixed axis, in a-plane InGaN quantum dots. All data were hence used in Figures 2-5 in the publication “Direct generation of linearly polarized single photons with a deterministic axis in quantum dots”…”

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots by Wang, T, Puchtler, T, Zhu, T, Jarman, J, Nuttall, L, Oliver, R, Taylor, R

“…Using a non-polar InGaN system, we report the successful realisation of single photon emission with a g⁽²⁾(0) of 0.21, a high polarisation degree of 0.80, a fixed polarisation axis determined by the underlying crystallography, and a GHz repetition rate with a radiative lifetime of 357 ps at 220 K in semiconductor quantum dots. The temperature insensitivity of these properties, together with the simple planar epitaxial growth method and absence of complex device geometries, demonstrates that fast single photon emission with polarisation control can be achieved in solid-state quantum dots above the Peltier temperature threshold, making this system a potential candidate for future on-chip applications in integrated systems.…”

Dataset: Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots by Wang, T, Puchtler, T

“…The purpose is to investigate whether non-polar a-plane quantum dots can act as high temperature single photon sources with optical polarisation control beyond the 200 K Peltier cooling threshold. …”

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots by Kanta Patra, S, Wang, T, Puchtler, T, Zhu, T, Oliver, R, Taylor, R, Schulz, S

“…Special attention is paid to the impact of the quantum dot size on the results. Our calculations show that the residual built-in fields in these nonpolar structures are compensated by the attractive Coulomb interaction, leading to the situation that the oscillator strength is almost unaffected by changes in the quantum dot size. …”

Non-polar InGaN quantum dots: polarisation-controlled semiconductor single-photon sources at on-chip temperatures by Wang, T

“…Non-polar (1120) a-plane InGaN/GaN quantum dots are one of the strongest candidates due to their ability to operate at temperatures similar to those in on-chip conditions, and intrinsic polarisation properties built into the material.…”

Temperature-dependent fine structure splitting in non-polar (11-20) InGaN quantum dots: Dataset by Wang, T

“…Data from Fig. 1 to 5 in "Temperature-dependent fine structure splitting in non-polar (11-20) InGaN quantum dots"…”

Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires by Puchtler, T, Wang, T, Ren, C, Tang, F, Oliver, R, Taylor, R, Zhu, T

“…We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. …”

Experimental and theoretical analyses of strongly polarized photon emission from non-polar InGaN quantum dots: Dataset by Wang, T

“…Data from figure 3 to 5 in "Experimental and theoretical analyses of strongly polarized photon emission from non-polar InGaN quantum dots"…”

Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot by Kocher, CC, Puchtler, TJ, Jarman, JC, Zhu, T, Wang, T, Nuttall, L, Oliver, RA, Taylor, RA

“…Nitride quantum dots are well suited for the deterministic generation of single photons at high temperatures. …”

Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer by Tutu, F, Sellers, I, Peinado, MG, Pastore, C, Willis, S, Watt, A, Wang, T, Liu, H

“…The use of high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the performance of multilayer InAs/GaAs quantum-dot solar cells. Threading dislocations are observed for a 30-layer quantum-dot structure with GaAs spacer layers grown at low temperature (510°C). …”

Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer by Tutu, F, Sellers, I, Peinado, MG, Pastore, C, Willis, S, Watt, A, Wang, T, Liu, H

Source data for "Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot" by Kocher, C, Puchtler, T, Jarman, J, Zhu, T, Wang, T, Nuttall, L, Oliver, R, Taylor, R

High-temperature performance of non-polar (11–20) InGaN quantum dots grown by a quasi-two-temperature method by Wang, T, Puchtler, T, Zhu, T, Jarman, J, Oliver, R, Taylor, R

“…Non-polar (11–20) a-plane InGaN quantum dots (QDs) are one of the strongest candidates to achieve on-chip applications of polarised single photon sources, which require a minimum operation temperature of ∼200 K under thermoelectrically cooled conditions. …”

High temperature performance of non-polar (11-20) InGaN quantum dots grown by a quasi-two-temperature method: Dataset by Wang, T

“…Data for Fig. 2-4 in "High temperature performance of non-polar (11-20) InGaN quantum dots grown by a quasi-two-temperature method"…”

Experimental and theoretical polarization data for figures 1, 3, and 4: Data from "Experimental and theoretical analysis of strongly polarized photon emission from non-polar (11-20) InGaN quantum dots" by Wang, T