Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor by Zhiheng Wang, Yanrong Cao, Xinxiang Zhang, Chuan Chen, Linshan Wu, Maodan Ma, Hanghang Lv, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao

“…A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. …”
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Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis by Jie-Jie Zhu, Xiao-Hua Ma, Bin Hou, Wei-Wei Chen, Yue Hao

“…Trap states in Al0.55Ga0.45N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. …”
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High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage by Yachao Zhang, Yifan Li, Jia Wang, Yiming Shen, Lin Du, Yao Li, Zhizhe Wang, Shengrui Xu, Jincheng Zhang, Yue Hao

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Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications by Meng Zhang, Yilin Chen, Siyin Guo, Hao Lu, Qing Zhu, Minhan Mi, Mei Wu, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao

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Comprehensive Comparison of MOCVD- and LPCVD-SiN_x Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications by Longge Deng, Likun Zhou, Hao Lu, Ling Yang, Qian Yu, Meng Zhang, Mei Wu, Bin Hou, Xiaohua Ma, Yue Hao

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The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs by Meng Zhang, Haozheng Wang, Ling Yang, Bin Hou, Mei Wu, Qing Zhu, Minhan Mi, Xu Zou, Chunzhou Shi, Qian Yu, Wenliang Liu, Hao Lu, Xiaohua Ma, Yue Hao

“…At the frequency of 3.6 GHz, compared with the conventional GaN HEMT (high electron mobility transistor) as PA, due to the field modulation effect of the dual-gate structure, the current collapse is effectively suppressed, and the output power density <inline-formula> <tex-math notation="LaTeX">$(P_{out})$ </tex-math></inline-formula> of the integrated device is increased from 6.90 W/mm to 7.85 W/mm, and the power added efficiency (PAE) is increased from 44.3&#x0025; to 51.1&#x0025;. …”
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Record combination fmax · Vbr of 25 THz·V in AlGaN/GaN HEMT with plasma treatment by Min-Han Mi, Xiao-Hua Ma, Ling Yang, Yang Lu, Bin Hou, Meng Zhang, Heng-Shuang Zhang, Sheng Wu, Yue Hao

“…A combination of high maximum oscillation frequency (fmax) and breakdown voltage (Vbr) was achieved in AlGaN/GaN high electron mobility transistors (HEMTs) with N2O plasma treatment on the access region. …”
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Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs by Maodan Ma, Yanrong Cao, Hanghang Lv, Zhiheng Wang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao

“…In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the position and concentration of the acceptor traps in the buffer layer. …”
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Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization by Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao

“…The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. …”
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Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate by Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, Yue Hao

“…The well-designed UVPD combines both the advantages of the high-transmittance ITO gate and the structure of the commercialized p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs), which opens a new possibility of fabricating large-scale, low-cost, and high-performance UVPDs in the future.…”
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