The simulation of high electron mobility transistor (HEMT) using silvaco software / by 444624 Ooi, Hooi Ean, Razali Ismail, supervisor, Fakulti Kejuruteraan Elektrik

Design, fabrication and characterization of AigaN/GaN high electron mobility transistor / by 457795 Nadia Abdul Razif, Abdul Manaf Hashim, Fakulti Kejuruteraan Elektrik

The simulation of high electron mobility transistor (HEMT) using silvaco software [electronic resource] / by 444624 Ooi, Hooi Ean, Fakulti Kejuruteraan Elektrik

Design fabrication and characterization of undoped AIGaN/GaN based high electron mobility transistor / by H. Sivanesswara Naidu, 1982-, Abdul Manaf Hashim

Integrated power devices and TCAD simulation / by Fu, Yue, author, Li, Zhanming, author, Ng, Wai Tung, author, Sin, Johnny K. O., author

“…It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems. …”