A new generation of high-power semiconductor devices by Drndarević Vujo R.

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Paralleling of IGBT Power Semiconductor Devices and Reliability Issues by Ravi Nath Tripathi, Ichiro Omura

Subjects: “…power semiconductor device…”
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Cooling Systems of Power Semiconductor Devices—A Review by Krzysztof Górecki, Krzysztof Posobkiewicz

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Thermal Analysis of Power Semiconductor Device in Steady-State Conditions by Adrian Plesca

“…This paper describes the mathematical model to calculate the power losses in power semiconductor devices used in bidirectional rectifier which supplies a resistive-inductive load. …”
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Devices for express diagnostics of power semiconductor devices and semiconductor converters by E. B. Koroleva, S. M. Kurmashev, K. K. Kim, A. A. Tkachuk, A. A. Kuznetsov

“…The method is proposed for determining potentially unreliable power semiconductor devices in group connections based on the results of analyzing the distribution of reverse currents in parallel branches, which made it possible to create a series of devices for diagnosing power semiconductor devices in converters, both with and without communication resistors. …”
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On the Problems of Current Limitations in Networks Based on Power Semiconductor Devices by Evgeniy Safonov, Vladimir Frolov, Ruslan Zhiligotov, Yuri Petrenya

“…The short-term mode of operation of the power semiconductor device with current regulated by the frequency and duty cycle of its operation makes it possible to facilitate the required current limitation in the circuit for the subsequent fault clearance with a typical electrical device. …”
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Compact Thermal Modeling of Power Semiconductor Devices with the Influence of Atmospheric Pressure by Paweł Górecki

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Overview of high voltage sic power semiconductor devices: development and application by Shiqi Ji, Zheyu Zhang, Fred Wang

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Modified asymmetrical 13-level inverter topology with reduce power semiconductor devices by Arif, M. Saad, Sarwer, Zeeshan, Md. Ayob, Shahrin, Mohd. Zaid, Mohd. Zaid, Ahmad, Shahbaz

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Characterization Circuit, Gate Driver and Fixture for Wide-Bandgap Power Semiconductor Device Testing by Osama Saadeh, Ahmad Al-Hmoud, Zakariya Dalala

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Development of Ag–In Alloy Pastes by Mechanical Alloying for Die Attachment of High-Power Semiconductor Devices by Chin-Hao Tsai, Wei-Chen Huang, Chengheng Robert Kao

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Design and Evaluation of High-Speed Overcurrent and Short-Circuit Detection Circuits With High Noise Margin for WBG Power Semiconductor Devices by Hae-Chan Park, Myeong-Jun Cha, Seon-Ho Jeon, Rae-Young Kim

“…Currently, wide bandgap (WBG) power semiconductor devices such as low-resistance SiC MOSFETs and GaN HEMTs are being utilized extensively to achieve high efficiency. …”
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Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off by Hui Li, Xinglin Liao, Yaogang Hu, Zhangjian Huang, Kun Wang

Subjects: “…power semiconductor device…”
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Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices by Oscar Miguel Rodríguez-Benítez, Mario Ponce-Silva, Juan Antonio Aquí-Tapia, Abraham Claudio-Sánchez, Luis Gerardo Vela-Váldes, Ricardo Eliu Lozoya-Ponce, Claudia Cortés-García

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Conduction Performance Evaluation of Silicon and SiC Power Semiconductors for Solid-State DC Breakers by Andreas Giannakis, Dimosthenis Peftitsis

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500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit by Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi

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Design of High-Frequency, High-Power Class <inline-formula><tex-math notation="LaTeX">$\Phi _{2}$</tex-math></inline-formula> Inverter Through On-Resistance and Output Capacitance... by Kamlesh Sawant, Yu Zhou, Keerti Palanisamy, Jungwon Choi

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A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability by Moufu Kong, Yuanmiao Duan, Bingke Zhang, Ronghe Yan, Bo Yi, Hongqiang Yang

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Assessment of MOV Deterioration under Energized Conditions by Sung-Wook Kim, Nam-Hoon Kim, Gyung-suk Kil

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Measurements and Computations of Internal Temperatures of the IGBT and the Diode Situated in the Common Case by Paweł Górecki, Krzysztof Górecki

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