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1
Bilayer graphene nanoribbon carrier statistics in the degenerate regime
Published 2011“…Based on the 1D behavior offered model illustrates exponential function of normalized Fermi energy which explains carrier concentration on low carrier regime. However on zero to 3kBT distance from and within conduction or valence bands high concentration of carriers sensitively depends on normalized Fermi energy which is independent of temperature as well. …”
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2
Carbon nanotube capacitance model in degenerate and nondegenerate regimes
Published 2011“…We predict that in the nondegenerate regime, the total capacitance is equivalent to the classical capacitance and that the quantum capacitance can be neglected, whereas only quantum capacitance needs to be taken into account in the calculation of the total capacitance in the degenerate regime.…”
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3
The tribofilm formation of MoS2 nanolubricant in boundary lubrication regime
Published 2022“…The experiment was carried out by pin-on-disk tribotester attached with electric contact resistance function conducted under boundary lubrication regime. The worn surface of specimen was characterized by scanning electron microscopy (SEM) coupled with energy dispersive X-ray spectroscopy (EDS) and surface profiler. …”
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4
Application of transmission-mode ultrasonic tomography to identify multiphase flow regime
Published 2011“…Experiments show that the multiphase flow regime for liquid, gas and solid at once can be identifying by using ultrasonic tomography. …”
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5
Carrier statistics model for a bilayer graphene nanoribbon in the nondegenerate regime
Published 2011“…A mathematical model of carrier concentration in BGNRs in the nondegenerate regime is presented. The model shows that in this regime the carrier statistics of BGNRs can be expressed by an exponential function of the normalized Fermi energy ?…”
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6
Application of fuzzy logic method in electric charge tomography as a flow regime identifier
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7
Exchange rate behaviour and management in Malaysia: empirical study across regimes / Azlul Kalilah Zaghlol
Published 2017“…Secondly, this study tests the Fixed Exchange Rate Regime-Misalignment (FERRM) hypothesis in establishing whether the pegged regime contributed to the worsening of misalignment. …”
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8
Modeling of quantum capacitance in graphene nanoribbon
Published 2011“…Considering the consequences of quantum capacitance on the device performance, we decided to work towards the analytical modeling of quantum capacitance in degenerate and nondegenerate regime for Graphene Nanoribbons (GNRs). The effects of classical capacitance in nondegenerate regime and quantum capacitance in degenerate regime are discussed. …”
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9
Numerical study of fermi energy for p-type silicon nanowire
Published 2009“…However, the results vary in degenerate regime. Fermi energy with respect to band edge is function of temperature that independent of the carrier concentration in the nondegenrate regime. …”
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10
Drift velocity and mobility of a graphene nanoribbon in a high magnitude electric field
Published 2011“…We study the high-field transport behavior of a graphene nanoribbon in the degenerate and nondegenerate regimes by incorporating a previous low field mobility calculation modified for a high electric field in both regimes. …”
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11
Analytical study of carrier statistic in 2-dimensional nanoscale P-MOS
Published 2009“…In the nondegenerate regime the carrier statistic results replicate the form the Boltzmann statistics. …”
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12
Malaysia’s relations with Saudi Arabia under Tun Dr. Mahathir era, 1981-2003
Published 2010“…Mahathir’s political regime interests.…”
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13
Numerical study of carrier velocity for p-type strained silicon MOSFET
Published 2009“…In the nondegenerate regime the results replicate Boltzmann statistic and its result is vary in degenerate regime. …”
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14
Ballistic transport in nanoscale devices
Published 2012“…Ballistic transport from low-field to high-field regime is reviewed with transition from low-field ballistic mobility to high-field drift velocity limited to the intrinsic velocity for a given dimensionality. …”
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15
The micro-circuit engineering in the nonohmic domain
Published 2009“…Considering the breakdown of Ohm's law in microcircuits, the direct and differential (incremental) resistance is shown to rise dramatically in the regime where applied voltage V triggering the nonohmic behavior is larger than the critical voltage V=(Vco/lo) L, where Vt) is the thermal voltage, lo) is the Ohmic mean free path, and L is the length of the conducting channel. …”
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16
An ultrasonic system for profiling bubblers in water
Published 2020“…Investigation of design parameters characterizing the operation and transport phenomena of bubble columns have led to better understanding of the hydrodynamic properties, heat and mass transfer mechanisms and flow regime characteristics ongoing during the operation[2, 3]. …”
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17
Resolving developmental conflict in Africa through bilateral relationship with Asian countries
Published 2010“…This bilateral relationship especially with Asia has a long historical record in Africa specifically with Nigeria, during the regime of late General Murtala Muhammad 1975-1976, the General Muhammad Buhari/Idiagbon regime 1983-1985, General Muhammad Sani Abacha Administration 1993-1998, and of recent the attempt made by the present administration of Alhaji Umaru Musa Yaradua/Goodluck 2007 to date for shifting the economic policy to the Asian continent in search of Nigerian solution to the ailing economy, and the resultant conflict that served as one factor sustaining Nigeria economic instability. …”
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18
Large deformation of metallic hollow spheres
Published 2009“…Within the scope of this paper, the uniaxial deformation behaviour in the regime of large deformations is investigated. Appropriate computational models are developed to account for the deformation mechanisms occurring under high deformations. …”
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19
Space-time features of THz emission from optical rectification in sub-wavelength areas
Published 2011“…We present our investigation on the THz space-time emission characteristic induced by the non-paraxial generation regime in highly localized THz generation via optical rectification on sub-wavelength areas.…”
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20
Invited paper: modeling of nanoscale MOSFET using MATLAB
Published 2009“…The velocity so obtained is considered in modeling the current-voltage characteristics of a MOSFET channel in the inversion regime and excellent agreement is obtained with the experimental data on an 80-nm channel.…”
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