Image simulations of quantum dots by Lang, C, Liao, X, Cockayne, D

“…An image simulation method for quantum dots based on a Bloch wave algorithm is described and applied to the case of quantum dots in the InN/GaN system.…”

The morphology and composition of quantum dots by Cockayne, D, Liao, X, Zou, J

“…A number of methods for investigating the structure and composition of quantum dots are discussed, with particular emphasis on the modelling of QD compositional profiles. …”

Quantum dots and nanowires for photonics applications by Mokkapati, S, Joyce, H, Kim, Y, Gao, Q, Tan, H, Jagadish, C

“…We review our results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area metal organic chemical vapor deposition (MOCVD) is used to grow the active region with quantum dots emitting at different wavelengths for fabrication of the integrated devices. …”

Characterisation of the structure and composition of quantum dots by Cockayne, D, Lang, C, Liao, X, Zou, J

“…A number of methods for investigating the structure and composition of quantum dots are discussed, with particular emphasis on the modelling of QD compositional profiles.…”

Quantum dots and nanowires for optoelectronic device applications by Gao, Q, Kim, Y, Joyce, H, Lever, P, Mokkapati, S, Buda, M, Tan, H, Jagadish, C

“…InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. …”

Dynamics of single InGaN quantum dots by Taylor, R, Robinson, J, Rice, J, Jarjour, A, Smith, J, Oliver, R, Briggs, G, Kappers, M, Humphreys, C, Arakawa, Y

“…Decay dynamics for single InGaN quantum dots are presented using time-resolved photoluminescence. …”

Transmission electron microscopy investigation of semiconductor quantum dots by Liao, X, Zou, J, Cockayne, D

“…Transmission electron microscopy was used to study InGaAs/GaAs and Ge(Si)/Si quantum dots. Results on the detailed microstructural investigation using plan-view [001] zone-axis bright-field diffraction contrast imaging technique combined with image simulations are presented.…”

Ordering, tunability, and stability in the formation of semiconductor quantum dots by Leon, R, Stevens-Kalceff, M, Zou, J, Lobo, C, Cockayne, D

Far infrared modulated photoluminescence in InSb quantum dots by Child, R, Nicholas, R, Mason, N, Shields, P, Wells, J, Bradley, I, Phillips, J, Murdin, B

“…The spectral dependence of the FIRM-PL signal measures the energy spectrum of the quantum dots, showing a peak at 14.5 meV corresponding to transitions between the first two energy levels of the quantum dot distribution. …”

GeSi quantum dots: the effect of alloying on the shape transformation by Lang, C, Nguyen-Manh, D, Cockayne, D

“…Alloying has been identified as an important mode of strain relief in quantum dot (QD) systems. We have performed both finite element analysis and atomistic simulations to understand the impact of alloying on the formation and shape change of GeSi QDs. …”

Mid-infrared luminescence from coupled quantum dots and wells by Shields, P, Li, L, Nicholas, R

“…The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. …”

Functionalization of single-wall carbon nanotubes with quantum dots and proteins by Azamian, B, Coleman, K, Davis, J, Hanson, N, Green, M

Time-resolved photoluminescence cross-correlation measurements on InAs quantum dots by Herz, L, Phillips, RT, Le Ru, E, Murray, R

“…We have studied recombination and relaxation dynamics in InAs quantum dots by means of photoluminescence cross-correlation techniques with sub-picosecond time-resolution. …”

Recombination of many-particle states in InAs self-organized quantum dots by Yuan, Z, Foo, E, Ryan, J, Mowbray, D, Skolnick, MS, Hopkinson, M

“…Strong many-body effects have been observed in the time-resolved photoluminescence spectroscopy of self-organized InAs/GaAs quantum dots. Our results show that the effects generate a considerable bandgap renormalization, being 28 meV at a dot occupancy of 20 electron-hole pairs for the lowest transition. …”

Bandgap renormalization and carrier relaxation in self-organized InAs quantum dots by Yuan, Z, Foo, E, Ryan, J, Mowbray, D, Skolnick, MS, Hopkinson, M

“…Strong many-body effects have been observed in time-resolved photoluminescence spectroscopy of self-organized InAs/GaAs quantum dots. Our results show that the effects generate considerable bandgap renormalization, being 28 meV at a dot occupancy of similar to 20 electron-hole pairs for the lowest transition. …”

Registration of single quantum dots for solid state cavity quantum electrodynamics by Lee, K, Green, A, Brossard, F, Taylor, R, Turberfield, A, Williams, D, Briggs, G, IEEE

Dark exciton signatures in time-resolved photoluminescence of single quantum dots by Smith, J, Dalgarno, P, Warburton, R, Gerardot, B, Petroff, P

“…Time-resolved photoluminescence of single charge tuneable quantum dots allows us to probe the differences in recombination dynamics between neutral and negatively charged excitons. …”

Time-resolved dynamics in single InGaN quantum dots by Taylor, R, Robinson, J, Rice, J, Lee, K, Jarjour, A, Na, J, Yasin, S, Oliver, R, Kappers, M, Humphreys, C, Andrew, G, Briggs, D, Williams, D, O'Reilly, E, Andreev, A, Arakawa, Y

“…We present measurements of microphotoluminescence decay dynamics for single InGaN quantum dots. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the two-dimensional wetting layer. …”

Ultrafast nonlinear spectroscopy of individual quantum dots: imaging and coherent coupling by Kasprzak, J, Patton, B, Langbein, W

“…We review our recent advances in four-wave mixing spectroscopy of individual semiconductor quantum dots using heterodyne spectral interferometry, a novel implementation of transient nonlinear spectroscopy allowing the study of the transient nonlinear polarization emitted from individual electronic transitions in both amplitude and phase. …”

Dynamics of bright and dark excitons in a self-assembled quantum dot by Dalgarno, P, Ediger, M, Smith, J, Warburton, R, Karrai, K, Govorov, A, Gerardot, B, Petroff, P

“…We report on a spin-flip process in a charge tunable quantum dot in which a non-radiative dark exciton, with angular momentum L = 2, becomes a radiative bright exciton, L = 1, through interactions with a Fermi sea in an n-doped back contact. …”