Showing 1 - 20 results of 26 for search '"S.p.A."', query time: 1.46s Refine Results
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    A Non-invasive System for Predicting Hemoglobin (Hb) in Dengue Fever (DF) and Dengue Hemorrhagic Fever (DHiF) by A. R., Herlina, I., Fatimah, T., Mohd. Nasir

    Published 2005
    “…The BIA technique passes low-amplitude electrical current, in the range of 500pA to 800[A, at a single frequency of 50 kHz. BIA data was sampled from 210 (comprises of 119 males and 91 females) serologically confirmed dengue fever (DF) and dengue hemorrhagic fever (DHF) patients, hospitalized at the Hospital Universiti Kebangsaan Malaysia (HUKM). …”
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  16. 16

    Design and simulation of 50 nm vertical double-gate MOSFET (VDGM) by Saad, Ismail, Ismail, Razali

    Published 2006
    “…With the gate length of 50 nm, body doping of 3.5 times 1018 cm-3 and oxide thickness, TOX = 2.5 nm, a good drive current ION of 7 muA/mum and a low off-state leakage current IOFF of 2 pA/mum was explicitly shown. Besides that, the subthreshold characteristics also highlighted a reasonably well-controlled SCE with subthreshold swing SubVT = 89 mV/decade and threshold voltage VT = 0.56 V. …”
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  17. 17

    An ontological model of experience-based knowledge management in agile software development. by Nik Ab Aziz, Nik Sakinah, Abdullah, Rusli

    Published 2014
    “…This ontology model will help by describing a relationship that will later on help in sharing the experience knowledge easily among Community of Practice(CoP). A literature review of the common things in the ASD been conducted, we then creating ontology model by using a tools called Protégé. …”
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  18. 18

    The design and characterization of breakdown mechanism on p+/n- well single photon Avalanche Diode (Spad) by Wong, Cindy E. Lin, Wan Hasan, Wan Haszerila, Isaak, Suhaila

    Published 2015
    “…The result demonstrated that, the SPAD with square shape active area of 2 x 2 µm2 using low doped p-well guard ring has VBD of 27 V and IA of 0.85 pA. The simulation performances are also useful for characterization performance of silicon SPAD prior fabrication in low voltage CMOS Process.…”
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    A 2.5-ghz optical receiver front-end in a 0.13 0.13-μm cmos process for biosensor application by Isaak, S., Yusof, Y., Leong, C. W.

    Published 2018
    “…Experimental results obtained show that the TIA connected to a Geiger mode photodiode with a total capacitance of 2 pF performed a bandwidth of 2.47 GHz with transimpedance gain of 53.8 and input referred current noise of 28.1 pA/(Hz)1/2 by using regulated cascade topology. …”
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