Novel solution for high-temperature dielectric application to encapsulate high-voltage power semiconductor devices by Chidambaram, Vivek, Jing, T., Yang, Ren Bin, Shakerzadeh, Maziar, Hoong, Lim Kuan

“…This paper summarizes novel solutions for high-temperature dielectric materials for encapsulating high-power semiconductor devices without any dielectric breakdown and also without introducing excessive thermal, electrical, and mechanical stresses to the encapsulated devices. …”
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Non-linear thermal resistance model for the simulation of high power GaN-based devices by Garciá-Sánchez, S., Iñiguez-de-la-Torre, I., Pérez, S., Ranjan, Kumud, Agrawal, Manvi, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Arulkumaran, Subramaniam, Ng, Geok Ing, González, T., Mateos, J.

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Equivalent circuit model of high power density SiC converter for common-mode conducted emission prediction and analysis by Liu, Yong, See, Kye Yak, Yin, Shan, Simanjorang, Rejeki, Gupta, Amit K., Lai, Jih-Sheng

“…This paper describes a complete equivalent circuit model that includes these effects of DC bus-bar, power semiconductor device, gate driver and LCL filter. With the comprehensive model, common-mode (CM) conducted emissions can be predicted and evaluated during the design phase for performance optimization purpose.…”
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Comparative analysis of IGBT parameters variation under different accelerated aging tests by Sathik, Mohamed Halick Mohamed, Sundararajan, Prasanth, Sasongko, Firman, Pou, Josep, Natarajan, Sivakumar

“…Power semiconductor devices are vulnerable to thermomechanical fatigue due to temperature cycling caused by system load profile and external climatic conditions. …”
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